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BUJ303B Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUJ303B Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 7 page  Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B Fig.13. Test Circuit for reverse bias safe operating area. V cl ≤ 1000V; Vcc = 150V; VBB = -5V; LB = 1µH; Lc = 200 µH Fig.14. Reverse bias safe operating area T j ≤ Tjmax Fig.15. Forward bias safe operating area. T hs ≤ 25 ˚C (1) P tot max and Ptot peak max lines. (2) Second breakdown limits. I Region of permissible DC operation. II Extension for repetitive pulse operation. III Extension during turn-on in single transistor converters provided that R BE ≤ 100 Ω and tp ≤ 0.6 µs. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. LB IBon -VBB LC T.U.T. VCC PROBE POINT VCL(RBSOAR) 1 10 102 103 10-2 10-1 1 10 102 VCE (V) IC I II DC 10ms 1ms 100us 10us tp= (A) ICM max IC max Duty cycle = 0.01 (1) (2) III 0 2 4 6 8 10 12 0 200 400 600 800 1000 1200 VCLAMP (V) IC (A) March 2002 5 Rev 1.000 |
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