Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

K4S51153PF Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K4S51153PF
Description  8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4S51153PF Datasheet(HTML) 9 Page - Samsung semiconductor

Back Button K4S51153PF Datasheet HTML 4Page - Samsung semiconductor K4S51153PF Datasheet HTML 5Page - Samsung semiconductor K4S51153PF Datasheet HTML 6Page - Samsung semiconductor K4S51153PF Datasheet HTML 7Page - Samsung semiconductor K4S51153PF Datasheet HTML 8Page - Samsung semiconductor K4S51153PF Datasheet HTML 9Page - Samsung semiconductor K4S51153PF Datasheet HTML 10Page - Samsung semiconductor K4S51153PF Datasheet HTML 11Page - Samsung semiconductor K4S51153PF Datasheet HTML 12Page - Samsung semiconductor  
Zoom Inzoom in Zoom Outzoom out
 9 / 12 page
background image
K4S51153PF - Y(P)F
September 2004
9
Mobile SDRAM
SIMPLIFIED TRUTH TABLE
(V=Valid, X=Don
′t Care, H=Logic High, L=Logic Low)
NOTES :
1. OP Code : Operand Code
A0 ~ A12 & BA0 ~ BA1 : Program keys. (@MRS)
2. MRS can be issued only at all banks precharge state.
A new command can be issued after 2 CLK cycles of MRS.
3. Auto refresh functions are the same as CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
Partial self refresh can be issued only after setting partial self refresh mode of EMRS.
4. BA0 ~ BA1 : Bank select addresses.
5. During burst read or write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
6. Burst stop command is valid at every burst length.
7. DQM sampled at the positive going edge of CLK masks the data-in at that same CLK in write operation (Write DQM latency
is 0), but in read operation, it makes the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2).
COMMAND
CKEn-1 CKEn
CS
RAS
CAS
WE
DQM BA0,1 A10/AP
A12,A11,
A9 ~ A0
Note
Register
Mode Register Set
H
X
L
L
L
L
X
OP CODE
1, 2
Refresh
Auto Refresh
H
H
L
L
L
H
X
X
3
Self
Refresh
Entry
L
3
Exit
L
H
L
H
H
H
X
X
3
H
X
X
X
3
Bank Active & Row Addr.
H
X
L
L
H
H
X
V
Row Address
Read &
Column Address
Auto Precharge Disable
H
X
L
H
L
H
X
V
L
Column
Address
(A0~A8)
4
Auto Precharge Enable
H
4, 5
Write &
Column Address
Auto Precharge Disable
H
X
L
H
L
L
X
V
L
Column
Address
(A0~A8)
4
Auto Precharge Enable
H
4, 5
Burst Stop
H
X
L
H
H
L
X
X
6
Precharge
Bank Selection
H
X
L
L
H
L
X
V
L
X
All Banks
X
H
Clock Suspend or
Active Power Down
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
X
Precharge Power Down
Mode
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
V
V
V
DQM
H
X
V
X
7
No Operation Command
H
X
H
X
X
X
X
X
L
H
H
H


Similar Part No. - K4S51153PF

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K4S511533F SAMSUNG-K4S511533F Datasheet
108Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-F1H SAMSUNG-K4S511533F-F1H Datasheet
108Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-F1L SAMSUNG-K4S511533F-F1L Datasheet
108Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-F75 SAMSUNG-K4S511533F-F75 Datasheet
108Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F-L SAMSUNG-K4S511533F-L Datasheet
108Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
More results

Similar Description - K4S51153PF

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K4S51153LF SAMSUNG-K4S51153LF Datasheet
108Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LC SAMSUNG-K4M51163LC Datasheet
114Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633E SAMSUNG-K4M511633E Datasheet
112Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163PC-RBE SAMSUNG-K4M51163PC-RBE Datasheet
115Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M51163LE SAMSUNG-K4M51163LE Datasheet
112Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511533F SAMSUNG-K4S511533F Datasheet
108Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M511633C-RN SAMSUNG-K4M511633C-RN Datasheet
114Kb / 12P
   8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M561633G SAMSUNG-K4M561633G Datasheet
114Kb / 12P
   4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S56163PF SAMSUNG-K4S56163PF Datasheet
114Kb / 12P
   4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4M64163PK SAMSUNG-K4M64163PK Datasheet
115Kb / 12P
   1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com