K4S51153PF-YF datasheet(5/12 Pages) SAMSUNG

Part #	K4S51153PF-YF

Description	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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5 / 12 page

K4S51153PF - Y(P)F

September 2004

5

Mobile SDRAM

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 70

°C for Commercial)

NOTES:

1. Measured with outputs open.

2. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

Parameter

Symbol

Test Condition

Version

Unit

Note

-75

-90

-1L

Operating Current

(One Bank Active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

60

55

50

mA

1

Precharge Standby Current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

0.6

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

0.6

Precharge Standby Current

in non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

20

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

2

Active Standby Current

in power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

10

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

2

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

40

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

10

mA

Operating Current

(Burst Mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

95

80

mA

1

Refresh Current

ICC5

tARFC

≥ tARFC(min)

95

mA

Self Refresh Current

ICC6

CKE

≤ 0.2V

TCSR Range

Max 40

Max 70

°C

Full Array

400

900

uA

1/2 of Full Array

320

600

1/4 of Full Array

280

500

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