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RN1008 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN1008 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page RN1007 ~RN1009 2001-06-07 1 Type No. R1 (kΩ) R2 (kΩ) RN1007 10 47 RN1008 22 47 RN1009 47 22 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1007,RN1008,RN1009 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2007~RN2009 Equivalent Circuit And Bias Resister Values Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V RN1007 6 RN1008 7 Emitter-base voltage RN1009 VEBO 15 V Collector current IC 100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55~150 °C JEDEC TO-92 EIAJ SC-43 TOSHIBA 2-5F1B Weight: 0.21g Unit: mm |
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