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RN1901 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN1901
Description  TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN1901 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN1901~RN1906
2001-06-07
2
Electrical Characteristics (Ta = 25
°°°°C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
―
VCB = 50V, IE = 0
―
―
100
Collector cut-off current
RN1901~1906
ICEO
―
VCE = 50V, IB = 0
―
―
500
nA
RN1901
―
0.82
―
1.52
RN1902
―
0.38
―
0.71
RN1903
―
0.17
―
0.33
RN1904
―
VEB = 10V, IC = 0
0.082
―
0.15
RN1905
―
0.078
―
0.145
Emitter cut-off current
RN1906
IEBO
―
VEB = 5V, IC = 0
0.074
―
0.138
mA
RN1901
―
30
―
―
RN1902
―
50
―
―
RN1903
―
70
―
―
RN1904
―
80
―
―
RN1905
―
80
―
―
DC current gain
RN1906
hFE
―
VCE = 5V, IC = 10mA
80
―
―
―
Collector-emitter
saturation voltage
RN1901~1906
VCE (sat)
―
IC = 5mA,
IB = 0.25mA
―
0.1
0.3
V
RN1901
―
1.1
―
2.0
RN1902
―
1.2
―
2.4
RN1903
―
1.3
―
3.0
RN1904
―
1.5
―
5.0
RN1905
―
0.6
―
1.1
Input voltage (ON)
RN1906
VI (ON)
―
VCE = 0.2V, IC = 5mA
0.7
―
1.3
V
RN1901~1904
―
1.0
―
1.5
Input voltage (OFF)
RN1905, 1906
VI (OFF)
―
VCE = 5V, IC = 0.1mA
0.5
―
0.8
V
Translation frequency
RN1901~1906
fT
―
VCE = 10V, IC = 5mA
―
250
―
MHz
Collector output
capacitance
RN1901~1906
Cob
―
VCB = 10V, IE = 0,
f = 1MHz
―
3
6
pF
RN1901
―
3.29
4.7
6.11
RN1902
―
7
10
13
RN1903
―
15.4
22
28.6
RN1904
―
32.9
47
61.1
RN1905
―
1.54
2.2
2.86
Input resistor
RN1906
R1
―
―
3.29
4.7
6.11
kΩ
RN1901~1904
¾
0.9
1.0
1.1
RN1905
¾
0.0421 0.0468 0.0515
Resistor ratio
RN1906
R1/R2
¾
―
0.09
0.1
0.11
―


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