TM497EU9

4194304-WORD BY 9-BIT

DYNAMIC RAM MODULE

SMMS499A – FEBRUARY 1994 – REVISED JUNE 1995

3

POST OFFICE BOX 1443

– 1 V to 7 V

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Voltage range on any pin (see Note 1)

– 1 V to 7 V

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Short-circuit output current

50 mA

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Power dissipation

3 W

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0

°C to 70°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55

°C to 150°C

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† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: All voltage values are with respect to VSS.

recommended operating conditions

MIN

NOM

MAX

UNIT

VCC

Supply voltage

4.5

5

5.5

V

VIH

High-level input voltage

2.4

6.5

V

VIL

Low-level input voltage (see Note 2)

– 1

0.8

V

TA

Operating free-air temperature

0

70

°C

NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic-voltage levels only.

electrical characteristics over recommended ranges of supply voltage and operating free-air

temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

’497EU9-60

’497EU9-70

’497EU9-80

UNIT

PARAMETER

TEST CONDITIONS

MIN

MAX

MIN

MAX

MIN

MAX

UNIT

VOH High-level output voltage

IOH = – 5 mA

2.4

2.4

2.4

V

VOL

Low-level output voltage

IOL = 4.2 mA

0.4

0.4

0.4

V

II

Input current (leakage)

VCC = 5 V,

VI = 0 V to 6.5 V,

All other pins = 0 V to VCC

±10

±10

±10

µA

IO

Output current (leakage)

VCC = 5.5 V,

VO = 0 V to VCC,

CAS high

±10

±10

±10

µA

ICC1

Read- or write-cycle current

(see Note 3)

VCC = 5.5 V,

Minimum cycle

325

290

260

mA

ICC2 Standby current

VIH = 2.4 V (TTL),

After 1 memory cycle,

RAS and CAS high

6

6

6

mA

ICC2 Standby current

VIH = VCC – 0.2 V (CMOS),

After 1 memory cycle,

RAS and CAS high

3

3

3

mA

ICC3

Average refresh current

(RAS-only or CBR)

(see Note 3)

VCC = 5.5 V,

Minimum cycle,

RAS cycling,

CAS high (RAS-only);

RAS low after CAS low (CBR)

325

290

260

mA

ICC4

Average page current

(see Note 4)

VCC = 5.5 V,

tPC = MIN,

RAS low,

CAS cycling

210

180

150

mA

NOTES:

3. Measured with a maximum of one address change while RAS = VIL

4. Measured with a maximum of one address change while CAS = VIH