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EN29F512-70TC Datasheet(PDF) 8 Page - Eon Silicon Solution Inc.

Part # EN29F512-70TC
Description  512 Kbit (64K x 8-bit) 5V Flash Memory
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Manufacturer  EON [Eon Silicon Solution Inc.]
Direct Link  http://www.essi.com.tw
Logo EON - Eon Silicon Solution Inc.

EN29F512-70TC Datasheet(HTML) 8 Page - Eon Silicon Solution Inc.

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This Data Sheet may be revised by subsequent versions
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
8
EN29F512
Rev. A, Issue Date: 2003/10/20
Table 5. EN29F512 Command Definitions
1
st
Write Cycle
2
nd
Write Cycle
3
rd
Write Cycle
4
th
Write Cycle
5
th
Write Cycle
6
th
Write Cycle
Command
Sequence
Read/Reset
Write
Cycles
Req’d
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
1
RA
RD
Reset
1
XXXh F0h
Read/Reset
4
555h
AAh
2AAh
55h
555h
F0h
RA
RD
AutoSelect
Manufacturer ID
4
555h
AAh
2AAh
55h
555h
90h
000h/
100h
7Fh/
1Ch
AutoSelect Device ID
4
555h
AAh
2AAh
55h
555h
90h
01h
21h
AutoSelect Sector
Protect Verify
4
555h
AAh
2AAh
55h
555h
90h
BA &
02h
00h/
01h
Byte Program
4
555h
AAh
2AAh
55h
555h
A0h
PA
PD
Chip Erase
6
555h
AAh
2AAh
55h
555h
80h
555h
AAh 2AAh 55h
555h 10h
Sector Erase
6
555h
AAh
2AAh
55h
555h
80h
555h
AAh 2AAh 55h
BA
30h
Sector Erase Suspend
1
xxxh
B0h
Sector Erase Resume
1
xxxh
30h
Notes:
RA = Read Address: address of the memory location to be read. This one is a read cycle.
RD = Read Data: data read from location RA during Read operation. This one is a read cycle.
PA = Program Address: address of the memory location to be programmed
PD = Program Data: data to be programmed at location PA
BA = Sector Address: address of the Sector to be erased. Address bits A15-A14 uniquely select any Sector.
The data is 00h for an unprotected sector and 01h for a protected sector.
Byte Programming Command
Programming the EN29F512 is performed on a byte-by-byte basis using a four bus-cycle operation
(two unlock write cycles followed by the Program Setup command and Program Data Write cycle).
When the program command is executed, no additional CPU controls or timings are necessary. An
internal timer terminates the program operation automatically. Address is latched on the falling edge
of CE or WE , whichever is last; data is latched on the rising edge of CE or WE , whichever is first.
The program operation is completed when EN29F512 returns the equivalent data to the
programmed location.
Programming status may be checked by sampling data on DQ7 (DATA polling) or on DQ6 (toggle
bit). Changing data from 0 to 1 requires an erase operation. When programming time limit is
exceeded, DQ5 will produce a logical “1” and a Reset command can return the device to Read
mode.
Chip Erase Command
Chip erase is a six-bus-cycle operation. The chip erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
chip erase command, which in turn invokes the Embedded Erase algorithm. The device does
not require
the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and
verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required
to provide any controls or timings during these operations. The Command Definitions table shows the
address and data requirements for the chip erase command sequence.


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