Integrated Circuit Solution Inc.

3

ALSR005-0A

1+$ + "

Symbol

Parameter

Value

Unit

Terminal Voltage with Respect to GND

–0.5 to +7.0

V

Temperature Under Bias

–10 to +85

°C

Storage Temperature

–65 to +150

°C

Power Dissipation

1.5

W

DC Output Current (LOW)

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause

permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of

this specification is not implied. Exposure to absolute maximum rating conditions for

extended periods may affect reliability.

Symbol

Parameter

ConditionsMax.

Unit

Input Capacitance

6

p.

Output Capacitance

8

p.

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

Symbol Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

2.4

—

V

Output LOW Voltage

—

0.4

V

Input HIGH Voltage

2.2

V

–0.3

0.8

V

Input Leakage

Com.

–5

5

µA

Ind.

–10

10

Output Leakage

Com.

–5

5

µA

Ind.

–10

10

Notes:

-35 ns-45 ns-55 ns-70 ns

Symbol Parameter

Test Conditions

Min. Max.

Min. Max.

Min. Max.

Min. Max.

Unit

Vcc Dynamic Operating

Com.

—

150

— 135

—

120

—

90

mA

Supply Current

Ind.

—

160

— 145

—

130

—

100

TTL Standby Current

Com.

—

40

—

40

—

40

—

40

mA

(TTL Inputs)

—

60

—

60

—

60

—

60

CMOS Standby

Com.

—

30

—

30

—

30

—

30

mA

Current (CMOS Inputs)

Ind.

—

40

—

40

—

40

—

40

Notes: