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LMX2119MX Datasheet(PDF) 1 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LMX2119MX
Description  1.9 GHz Power Amplifier
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMX2119MX Datasheet(HTML) 1 Page - National Semiconductor (TI)

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TLW12686
PRELIMINARY
June 1996
LMX2119 19 GHz Power Amplifier
General Description
The LMX2119 19 GHz Power Amplifier is a monolithic inte-
grated power amplifier suitable for use in the Digital Europe-
an Cordless Telecommunications (DECT) system as well as
other mobile telephony and wireless communications appli-
cations It is fabricated using an advanced Gallium Arsenide
technology that allows single supply (a3V) operation
The LMX2119 consists of two MESFETs cascaded to pro-
vide 245 dB of power gain The output power at 36V is
a
265 dBm with an input power level of a2 dBm The input
VSWR of the power amplifier remains constant in the ON
and OFF state
The LMX2119 is available in a 16-pin SOIC surface mount
plastic package
Features
Y
Single a3V supply operation
Y
Class A bias l30% power added efficiency
Y
245 dB power gain a265 dBm output power
Y
50X inputoutput impedance
Y
350 mA current consumption at a36V
Applications
Y
Digital European Cordless Telecommunications (DECT)
Y
Portable wireless communications (PCSPCN cordless)
Y
Wireless local area networks (WLANs)
Y
Other wireless communications systems
Functional Block Diagram
TLW12686 – 1
This data sheet contains the design specifications for product development
Specifications may change in any manner without notice
C1996 National Semiconductor Corporation
RRD-B30M27Printed in U S A
http
www nationalcom


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