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M11B11664A-40T Datasheet(PDF) 4 Page - List of Unclassifed Manufacturers |
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M11B11664A-40T Datasheet(HTML) 4 Page - List of Unclassifed Manufacturers |
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4 / 15 page  (OLWH07 M11B11664A Elite Memory Technology Inc Publication Date : Dec. 2000 Revision : 1.3 4/15 CAPACITANCE (Ta = 25 C ° , VCC = 5V ± 10%) PARAMETER SYMBOL TYP MAX UNIT Input Capacitance (address) CI1 -5 pF Input Capacitance ( RAS , CASH , CASL , WE , OE ) CI2 -7 pF Output capacitance (I/O0~I/O15) CI / O -10 pF AC ELECTRICAL CHARACTERISTICS (Ta = 0 to 70 C ° , VCC =5V ± 10%, VSS = 0V) (note 14) Test Conditions Input timing reference levels : 0V, 3V Output reference level : VOL= 0.8V, VOH=2.0V Output Load : 2TTL gate + CL (50pF) Assumed tT = 2ns -25 -30 -35 -40 PARAMETER SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX UNIT Notes Read or Write Cycle Time tRC 43 55 65 75 ns Read Write Cycle Time tRWC 65 85 95 105 ns EDO-Page-Mode Read or Write Cycle Time tPC 10 12 14 16 ns 22 EDO-Page-Mode Read-Write Cycle Time tPCM 32 37 42 47 ns 22 Access Time From RAS tRAC 25 30 35 40 ns 4 Access Time From CAS tCAC 8 9 10 11 ns 5,20 Access Time From OE tOAC 8 9 10 11 ns 13,20 Access Time From Column Address tAA 12 15 18 20 ns Access Time From CAS Precharge tACP 14 17 20 22 ns 20 RAS Pulse Width tRAS 25 10,000 30 10,000 35 10,000 40 10,000 ns RAS Pulse Width (EDO Page Mode) tRASC 25 100,000 30 100,000 35 100,000 40 100,000 ns RAS Hold Time tRSH 8 910 11 ns 25 RAS Precharge Time tRP 15 20 25 30 ns CAS Pulse Width tCAS 4 10,000 5 10,000 5 10,000 6 10,000 ns 24 CAS Hold Time tCSH 21 26 30 35 ns 19 CAS Precharge Time tCP 4 4 5 5 ns 6,23 RAS to CAS Delay Time tRCD 10 17 10 21 10 25 10 29 ns 7,18 CAS to RAS Precharge Time tCRP 5 5 5 5 ns 19 Row Address Setup Time tASR 0 000 ns Row Address Hold Time tRAH 5 555 ns RAS to Column Address Delay Time tRAD 813 8 158 17820 ns 8 Column Address Setup Time tASC 0 0 0 0 ns 18 Column Address Hold Time tCAH 5 5 5 5 ns 18 Column Address Hold Time (Reference to RAS ) tAR 22 26 30 34 ns Column Address to RAS Lead Time tRAL 12 15 18 20 ns |
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