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M28C256-20WMS6T Datasheet(PDF) 8 Page - STMicroelectronics |
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M28C256-20WMS6T Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 21 page  Symbol Parameter Min Max Unit tPUR Time Delay to Read Operation 1 µs tPUW Time Delay to Write Operation (once VCC ≥ VWI)5 ms VWI Write Inhibit Threshold 3.0 4.2 V Note: 1. Sampled only, not 100% tested. Table 7. Power Up Timing for M28256 (1) (TA = 0 to 70 °C or –40 to 85°C; VCC = 4.5V to 5.5V) Symbol Parameter Test Condition Min Max Unit ILI Input Leakage Current 0V ≤ VIN ≤ VCC 10 µA ILO Output Leakage Current 0V ≤ VIN ≤ VCC 10 µA ICC (1) Supply Current (CMOS inputs) E=VIL,G = VIL, f = 5 MHz, VCC = 3.3V 15 mA E=VIL,G = VIL, f = 5 MHz, VCC = 3.6V 15 mA ICC2 (1) Supply Current (Standby) CMOS E > VCC –0.3V 20 µA VIL Input Low Voltage – 0.3 0.6 V VIH Input High Voltage 2 VCC + 0.5 V VOL Output Low Voltage IOL = 2.1 mA 0.2 VCC V VOH Output High Voltage IOH = –400 µA 0.8 VCC V Note: 1. All I/O’s open circuit. Table 8. Read Mode DC Characteristics for M28256-W (TA = 0 to 70 °C or –40 to 85°C; VCC = 2.7V to 3.6V) Symbol Parameter Min Max Unit tPUR Time Delay to Read Operation 1 µs tPUW Time Delay to Write Operation (once VCC ≥ VWI)10 ms VWI Write Inhibit Threshold 1.5 2.5 V Note: 1. Sampled only, not 100% tested. Table 9. Power Up Timing for M28256-W (1) (TA = 0 to 70 °C or –40 to 85°C; VCC = 2.7V to 3.6V) 8/21 M28256 |
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