©2003 Fairchild Semiconductor Corporation

April 2003

ISL9R860PF2 Rev. A

ISL9R860PF2

8A, 600V Stealth™ Diode

General Description

The ISL9R860PF2 is a Stealth™ diode optimized for

low loss performance in high frequency hard switched

applications. The Stealth™ family exhibits low reverse

under typical operating conditions.

This device is intended for use as a free wheeling or

boost diode in power supplies and other power

reduce loss in switching transistors. The soft recovery

minimizes ringing, expanding the range of conditions

under which the diode may be operated without the use

of additional snubber circuitry. Consider using the

Stealth™ diode with an SMPS IGBT to provide the

most efficient and highest power density design at

lower cost.

Formerly developmental type TA49409.

Features

• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V

• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV

• Avalanche Energy Rated

Applications

• Switch Mode Power Supplies

• Hard Switched PFC Boost Diode

• UPS Free Wheeling Diode

• Motor Drive FWD

• SMPS FWD

• Snubber Diode

Symbol

Parameter

Ratings

Units

Peak Repetitive Reverse Voltage

600

V

Working Peak Reverse Voltage

600

V

DC Blocking Voltage

600

V

8

A

Repetitive Peak Surge Current (20kHz Square Wave)

16

A

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

100

A

Power Dissipation

26

W

Avalanche Energy (1A, 40mH)

20

mJ

Operating and Storage Temperature Range

-55 to 150

°C

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

300

°C

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

K

A

CATHODE

ANODE

TO-220F

Package

Symbol