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U6264BS2A07 Datasheet(PDF) 1 Page - Zentrum Mikroelektronik Dresden AG

Part # U6264BS2A07
Description  STANDARD 5K X 8 SRAM
Download  9 Pages
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Manufacturer  ZMD [Zentrum Mikroelektronik Dresden AG]
Direct Link  http://www.zmdi.com
Logo ZMD - Zentrum Mikroelektronik Dresden AG

U6264BS2A07 Datasheet(HTML) 1 Page - Zentrum Mikroelektronik Dresden AG

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1
April 20, 2004
U6264B
Standard 8K x 8 SRAM
The U6264B is a static RAM manu-
factured using a CMOS process
technology with the following ope-
rating modes:
- Read
- Standby
- Write
- Data Retention
The memory array is based on a
6-transistor cell.
The circuit is activated by the rising
edge of E2 (at E1 = L), or the falling
edge of E1 (at E2 = H). The
address and control inputs open
simultaneously. According to the
information of W and G, the data
inputs, or outputs, are active. In a
Read cycle, the data outputs are
activated by the falling edge of G,
afterwards the data word read will
be available at the outputs DQ0 -
DQ7. After the address change, the
data outputs go High-Z until the
new read information is available.
The data outputs have no preferred
state. If the memory is driven by
CMOS levels in the active state,
and if there is no change of the
address, data input and control
signals W or G, the operating cur-
rent (at IO = 0 mA) drops to the
value of the operating current in the
Standby mode. The Read cycle is
finished by the falling edge of E2 or
W, or by the rising edge of E1,
respectively.
Data retention is guaranteed down
to 2 V. With the exception of E2, all
inputs consist of NOR gates, so
that no pull-up/pull-down resistors
are required. This gate circuit
allows to achieve low power
standby requirements by activation
with TTL-levels too.
If the circuit is inactivated by
E2 = L, the standby current (TTL)
drops to 150
µA typ.
!
8192 x 8 bit static CMOS RAM
!
70 ns Access Times
!
Common data inputs and
outputs
!
Three-state outputs
!
Typ. operating supply current
70 ns: 10 mA
!
Standby current:
< 2
µA at Ta ≤ 70 °C
!
Data retention current at 2 V:
< 1
µA at Ta ≤ 70 °C
!
TTL/CMOS-compatible
!
Automatic reduction of power
dissipation in long Read or Write
cycles
!
Power supply voltage 5 V
!
Operating temperature ranges:
0 to 70
°C
-40 to 85
°C
-40 to 125 °C
!
QS 9000 Quality Standard
!
ESD protection > 2000 V
(MIL STD 883C M3015.7)
!
Latch-up immunity > 100 mA
!
Packages: PDIP28 (600 mil)
SOP28 (330 mil)
Pin Description
Signal Name
Signal Description
A0 - A12
Address Inputs
DQ0 - DQ7
Data In/Out
E1
Chip Enable 1
E2
Chip Enable 2
G
Output Enable
W
Write Enable
VCC
Power Supply Voltage
VSS
Ground
n.c.
not connected
Pin Configuration
1
n.c.
VCC
28
2
A12
W (WE)
27
4
A6
A8
25
5
A5
A9
24
3
A7
E2 (CE2)
26
6
A4
A11
23
7
A3
G (OE)
22
8
A2
A10
21
12
DQ1
DQ5
17
9
A1
E1 (CE1)
20
10
A0
DQ7
19
11
DQ0
DQ6
18
13
DQ2
DQ4
16
14
VSS
DQ3
15
PDIP
Top View
SOP
Features
Description


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