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U630H16D1A45 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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U630H16D1A45 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
2 / 14 page 2 April 7, 2005 U630H16 Block Diagram Operating Mode E NE W G DQ0 - DQ7 Standby/not selected H *** High-Z Internal Read L H H H High-Z Read L H H L Data Outputs Low-Z Write L H L * Data Inputs High-Z Truth Table for SRAM Operations a: Stresses greater than those listed under „Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Absolute Maximum Ratingsa Symbol Min. Max. Unit Power Supply Voltage VCC -0.5 7 V Input Voltage VI -0.3 VCC+0.5 V Output Voltage VO -0.3 VCC+0.5 V Power Dissipation PD 1W Operating Temperature C-Type K-Type A-Type Ta 0 -40 -40 70 85 85 °C °C °C Storage Temperature Tstg -65 150 °C Characteristics All voltages are referenced to VSS = 0 V (ground). All characteristics are valid in the power supply voltage range and in the operating temperature range specified. Dynamic measurements are based on a rise and fall time of ≤ 5 ns, measured between 10 % and 90 % of VI,as well as input levels of VIL = 0 V and VIH = 3 V. The timing reference level of all input and output signals is 1.5 V, with the exception of the tdis-times and ten-times, in which cases transition is measured ± 200 mV from steady-state voltage. * H or L EEPROM Array 32 x (64 x 8) STORE RECALL SRAM Array 32 Rows x 64 x 8 Columns A5 A6 A7 A8 A9 Store/ Recall Control VCC VSS VCC G NE E W DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 Column I/O Column Decoder A0 A1 A2 A3 A4A10 |
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