S29GL01GP datasheet(80/82 Pages) CYPRESS

Part #	S29GL01GP

Description	1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology

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Manufacturer	CYPRESS [Cypress Semiconductor]

Direct Link	http://www.cypress.com

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80 / 82 page

Document Number: 002-00886 Rev. *B

Page 81 of 83

S29GL01GP

S29GL512P

S29GL256P

S29GL128P

**

-

RYSU

11/20/2009 A12:Table Input/Output Descriptions Removed RFU description

Figure 64-ball Fortified Ball Grid Array

Changed all RFU pins to NC pins

Figure 56-pin Standard TSOP (Top View)

Changed all RFU pins to NC pins

Table Autoselect Exit

Changed cycle description to Auto Select Exit Command

Table Chip Erase

Changed address of last C source code command from

0x000h to 0x555h

Erase Suspend/Erase Resume

Changed first paragraph, second sentence to sector address is “don't care”

for Erase Suspend

Changed sixth paragraph, second sentence to sector address is “don't care”

for Erase Suspend

Tables

Program Suspend

Program Resume

Unlock Bypass Entry

Unlock Bypass Program

Unlock Bypass Reset

Added Byte Address to tables

Unlock Bypass

Third paragraph, first sentence added unlock bypass Sector Erase and

unlock bypass Chip Erase

as valid commands

Changed paragraph, third sentence to sector address of exit command is

“don't care”.

Writing Commands/Command Sequence

Changed tables listed in fourth sentence to Table 6.1-6.4

WP#/ACC Method

Changed table listed in Note section to 11.2.

Secured Silicon Sector Entry/Exit Command Sequence

Added source code for program under Table 10.3

Table Secured Silicon Sector Exit

Changed Byte and Word addresses of

Exit Cycle to “XXXh”

Figure Test Setup

Changed test setup to show only a load of CL

Table Test Specification

Removed Output Load Test Condition

Table S29GL-P Erase and Program Operations

Removed tGHWL

Table S29GL-P Alternate CE# Controlled Erase and Program

Operations

Changed description of tGHEL to (OE# High to CE# Low)

Change Note 2 to “DC Characteristics

TSOP Pin and BGA Package Capacitance

Changed RESET# values.

Document Title:S29GL01GP, S29GL512P, S29GL256P, S29GL128P

1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology

Document Number: 002-00886

Rev.

ECN No.

Orig. of

Change

Submission

Date

Description of Change

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SPANSION	S29GL01GP	2Mb / 77P	3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL01GP	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL01GP	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
	S29GL01GP	2Mb / 81P	1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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Similar Description - S29GL01GP

Manufacturer	Part #	Datasheet	Description
Cypress Semiconductor	S29GL512N	1Mb / 92P	512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
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S29GL01GP Datasheet(PDF) 80 Page - Cypress Semiconductor

S29GL01GP Datasheet(HTML) 80 Page - Cypress Semiconductor

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