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S29GL512N Datasheet(PDF) 76 Page - Cypress Semiconductor

Part # S29GL512N
Description  512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S29GL512N Datasheet(HTML) 76 Page - Cypress Semiconductor

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Document Number: 002-01522 Rev. *B
Page 76 of 92
S29GL512N
S29GL256N
S29GL128N
Figure 15.10
Alternate CE# Controlled Write (Erase/Program) Operation Timings
Notes
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device.
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY


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