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S29GL512N Datasheet(PDF) 86 Page - Cypress Semiconductor |
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S29GL512N Datasheet(HTML) 86 Page - Cypress Semiconductor |
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86 / 92 page  Document Number: 002-01522 Rev. *B Page 86 of 92 S29GL512N S29GL256N S29GL128N ** - RYSU 05/13/2004 A4:Global Removed references to RTSOP. Distinctive Characteristics Removed 16-word/32-byte page read buffer from Performance Characteristics. Changed Low power consumption to 25 mA typical active read current and removed 10 mA typical intrapage active read current. Ordering Information Changed formatting of pages. Changed model numbers from 00,01,02,03 to 01, 02, V1, V2. Table Device Bus Operations Combined WP# and ACC columns. Tables CFI Query Identification String, System Interface String, Device Geometry Definition, and Primary Vendor-Specific Extended Query Added Address (x8) column. Word Program Command Sequence Added text to fourth paragraph. Figure Write Buffer Programming Operation Added note references and removed DQ15 and DQ13. Figure Program Suspend/Program Resume Changed field to read XXXh/B0h and XXXh/30h. Password Protection Command Set Definitions Replaced all text. Command Definitions Changed the first cycle address of CFI Query to 55. Memory Array Commands (x8) Table Changed the third cycle data Device ID to 90. Removed Unlock Bypass Reset. Removed Note 12 and 13. Figure Data# Polling Algorithm Removed DQ15 and DQ13. Absolute Maximum Ratings Removed VCC from All other pins with respect to Ground. CMOS Compatible Changed the Max of ICC4 to 70 mA. Added VIL to the Test conditions of ICC5, ICC6, and ICC7 Change the Min of VIL to - 0.1 V. Updated note 5. Read-Only Operations–S29GL128N Only Added tCEH parameter to table.1/8/16 Figure Read Operation Timings Added tCEH to figure. (Continued) Document Title:S29GL512N, S29GL256N, S29GL128N 512, 256, 128 Mbit, 3 V, Page Flash Featuring 110 nm MirrorBit Document Number: 002-01522 Rev. ECN No. Orig. of Change Submission Date Description of Change |
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