This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 0.5 / Oct. 2004

2

HY27UA(08/16)1G1M Series

HY27SA(08/16)1G1M Series

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

FEATURES SUMMARY

HIGH DENSITY NAND FLASH MEMORIES

- Cost effective solutions for mass storage applications

NAND INTERFACE

- x8 or x16 bus width.

- Multiplexed Address/ Data

- Pinout compatibility for all densities

SUPPLY VOLTAGE

- 3.3V device: VCC = 2.7 to 3.6V

: HY27UAXX1G1M

- 1.8V device: VCC = 1.7 to 1.95V : HY27SAXX1G1M

1.8V Operation Product : TBD

Memory Cell Array

- 1056Mbit = 528 Bytes x 32 Pages x 8,192 Blocks

PAGE SIZE

- x8 device: (512 + 16 spare) Bytes

: HY27(U/S)A081G1M

- x16 device: (256 + 8 spare) Words

: HY27(U/S)A161G1M

BLOCK SIZE

- x8 device: (16K + 512 spare) Bytes

: HY27(U/S)A081G1M

- x16 device: (8K + 256 spare) Words

: HY27(U/S)A161G1M

PAGE READ / PROGRAM

- Random access: 12us (max)

- Sequential access: 50ns (min)

- Page program time: 200us (typ)

COPY BACK PROGRAM MODE

- Fast page copy without external buffering

FAST BLOCK ERASE

- Block erase time: 2ms (Typ)

STATUS REGISTER

ELECTRONIC SIGNATURE

Sequential Row Read Option

AUTOMATIC PAGE 0 READ AT POWER-UP

OPTION

- Boot from NAND support

- Automatic Memory Download

SERIAL NUMBER OPTION

HARDWARE DATA PROTECTION

- Program/Erase locked during Power transitions

DATA INTEGRITY

- 100,000 Program/Erase cycles

- 10 years Data Retention

PACKAGE

- HY27(U/S)A(08/16)1G1M-T(P)

: 48-Pin TSOP1 (12 x 20 x 1.2 mm)

- HY27(U/S)A(08/16)1G1M-T (Lead)

- HY27(U/S)A(08/16)1G1M-TP (Lead Free)

- HY27(U/S)A08121A-V(P)

: 48-Pin WSOP1 (12 x 17 x 0.7 mm)

- HY27(U/S)A081G1M-V (Lead)

- HY27(U/S)A081G1M-VP (Lead Free)

- HY27(U/S)A(08/16)121M-F(P)

: 63-Ball FBGA (8.5 x 15 x 1.2 mm)

- HY27(U/S)A(08/16)1G1M-F (Lead)

- HY27(U/S)A(08/16)1G1M-FP (Lead Free)