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K4N56163QF-GC37 Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K4N56163QF-GC37
Description  256Mbit gDDR2 SDRAM
Download  73 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4N56163QF-GC37 Datasheet(HTML) 9 Page - Samsung semiconductor

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- 9 -
Rev 1.6 (Apr. 2005)
256M gDDR2 SDRAM
K4N56163QF-GC
Differential input AC logic Level
Notes:
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK,
DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS).
The minimum value is equal to VIH(AC) - VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track
variations in VDDQ . VIX(AC) indicates the voltage at which differential input signals must cross.
Differential AC output parameters
Note :
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track varia-
tions in VDDQ . VOX(AC) indicates the voltage at which differential output signals must cross.
Symbol
Parameter
Min.
Max.
Units
Notes
VID(AC)
AC differential input voltage
0.5
VDDQ + 0.6
V
1
VIX(AC)
AC differential cross point voltage
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
2
Symbol
Parameter
Min.
Max.
Units
Note
VOX(AC)
AC differential cross point voltage
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
1
VDDQ
Crossing point
VSSQ
VTR
VCP
VID
VIX or VOX
< Differential signal levels >


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