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PMR280UN Datasheet(PDF) 8 Page - NXP Semiconductors |
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PMR280UN Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 12 page Philips Semiconductors PMR280UN N-channel µTrenchMOS™ ultra low level FET Product data Rev. 01 — 5 March 2004 8 of 12 9397 750 12662 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Tj =25 °C and 150 °C; VGS =0V ID = 1 A; VDD =10V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 03an05 0 0.2 0.4 0.6 0.8 1 00.5 11.5 VSD (V) IS (A) Tj = 25 °C 150 °C VGS = 0 V 03an07 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 QG (nC) VGS (V) ID = 1 A Tj = 25 °C VDD = 10 V |
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