EEPROM

AS58C1001

Austin Semiconductor, Inc.

AS58C1001

Rev. 4.0 3/01

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

5

ABSOLUTEMAXIMUMRATINGS*

Storage Temperature ............................................-65

°C to +150°C

Maximum Junction Temperature**....................................+150

°C

Power Dissipation...................................................................1.0W

*Stresses greater than those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the

operation section of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods

may affect reliability.

** Junction temperature depends upon package type, cycle

time, loading, ambient temperature and airflow.

ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS

PARAMETER

CONDITION

SYMBOL

MIN

MAX

UNITS

NOTES

Input High (Logic 1) Voltage

2.2

V9

Input Low (Logic 0) Voltage

3

-0.3

0.8

V

2

Input Voltage (RES\ Pin)

Vcc-0.5

V

Input Leakage Current

4

-2

2

µΑ

4

Output Leakage Current

-2

2

µΑ

Output High Voltage

2.4

V

Output Low Voltage

0.4

V

CONDITIONS

SYM

-15

-20

-25

UNITS NOTES

Cycle=1

µS, Duty=100%

20

20

20

Cycle=MIN, Duty=100%

65

55

50

CE\=Vcc, Vcc = 5.5V

350

350

350

µA

333

mA

PARAMETER

MAX

Power Supply Current:

Operating

Power Supply Current:

Standby

mA

CAPACITANCE

PARAMETER

CONDITIONS

SYMBOL

MAX

UNITS

NOTES

Input Capacitance

6pF

Output Capactiance

Co

12

pF