NTE466 datasheet(1/2 Pages) NTE

Part #	NTE466

Description	Silicon N-Channel JFET Transistor Chopper, High Speed Switch

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Manufacturer	NTE [NTE Electronics]

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NTE466

Silicon N–Channel JFET Transistor

Chopper, High Speed Switch

Absolute Maximum Ratings:

Drain–Source Voltage, VDS

40V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Drain–Gate Voltage, VDG

40V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Gate–Source Voltage, VGSR

–40V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Gate Current, IG(f)

50mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (TA = +25°C), PD

360mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25

°C

2.4mW/

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, Tstg

–65

° to +175°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF Characteristics

Gate–Source Breakdown Voltage

V(BR)GSS IG = 1A, VDS = 0

–40

–

V

Gate Reverse Current

IGSS

VGS = –20V, VDS = 0

–

0.25

nA

VGS = –20V, VDS = 0, TA = +150°C

–

0.5

µA

Gate–Source Cutoff Voltage

VGS(off)

VDS = 15V, ID = 0.5nA

–4

–

–10

V

Drain Cutoff Current

ID(off)

VDS = 15V, VGS = –10V

–

0.25

nA

VDS = 15V, VGS = –10V, TA = +150°C

–

0.5

µA

ON Characteristics

Zero–Gate–Voltage Drain Current

IDSS

VDS = 15V, VGS = 0, Note 1

50

–

mA

Drain–Source ON–Voltage

VDS(on)

ID = 20mA, VGS = 0

–

0.75

V

Small–Signal Characteristics

Drain–Source “ON” Resistance

rDS(on)

VGS = 0, ID = 0, f = 1kHz

–

25

Ω

Input Capacitance

Ciss

VDS = 0, VGS = –10V, f = 1MHz

–

18

pF

Reverse Transfer Capacitance

Crss

VDS = 0, VGS = –10V, f = 1MHz

–

0.8

pF

Switching Characteristics (Note 2)

Turn–On Delay Time

td(on)

VDD = 10V, ID(on) = 20mA,

–

6

ns

Rise Time

tr

VGS(on) = 0, VGS(off) = –10V

–

3

ns

Turn–Off Time

toff

–

25

ns

Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle

≤ 10%.

Note 2. The ID(on) values are nominal; exact values vary slightly with transistor parameters.

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