BS62UV2006TC-10 datasheet(5/9 Pages) BSI

Part #	BS62UV2006TC-10

Description	Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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R0201-BS62UV2006

Revision 1.1

Jan.

2004

5

BSI

READ CYCLE3 (1,4)

READ CYCLE2 (1,3,4)

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE1 = VIL and CE2= VIH.

3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.

4. OE = VIL

.

5. The parameter is guaranteed but not 100% tested.

t CLZ

(5)

D

OUT

CE2

CE1

(5)

t ACS2

t ACS1

t OH

t RC

t OE

t CLZ2

t CHZ2

(2,5)

D

OUT

CE2

CE1

OE

ADDRESS

(5)

t CLZ1

(5)

t ACS1

t ACS2

t CHZ1

(1,5)

t OHZ (5)

t OLZ

t AA

t CHZ1, t CHZ2

BS62UV2006

SWITCHING WAVEFORMS (READ CYCLE)

READ CYCLE1 (1,2,4)

t RC

t OH

t AA

D

OUT

ADDRESS

t OH

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BS62UV2006TC-10 Datasheet(PDF) 5 Page - Brilliance Semiconductor

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