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NTE469 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE469 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE469 Silicon N–Channel JFET Transistor Chopper, High Speed Switch Applications: D Analog Switches D Choppers D Commutators Absolute Maximum Ratings: Drain–Source Voltage, VDS 35V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drain–Gate Voltage, VDG 35V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current, IG 50mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Device Dissipation (TA = +25°C), PD 625mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 25 °C 5.68mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature Range, TJ –55 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –55 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (During Soldering), TL +300 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Gate–Source Breakdown Voltage V(BR)GS S IG = 1µA, VDS = 0 35 – – V Gate Reverse Current IGSS VGS = –15V, VDS = 0 – – –1.0 nA Gate–Source Cutoff Voltage VGS(off) VDS = 5V, ID = 1µA –0.5 – –3.0 V Drain Cutoff Current ID(off) VDS = 5V, VGS = –10V – – 1.0 nA ON Characteristics Zero–Gate Voltage Drain Current IDSS VDS = 15V, VGS = 0, Note 1 2.0 – – mA Static Drain–Source ON Resistance rDS(on) VDS = 0.1V – – 100 Ω Drain–Gate ON Capacitance Cdg(on) VDS = VGS = 0, f = 1MHz – – 28 pF Source–Gate ON Capacitance Csg(on) VDS = VGS = 0, f = 1MHz – – 28 pF Drain–Gate OFF Capacitance Cdg(off) VGS = –10V, f = 1MHz – – 5 pF Source–Gate OFF Capacitance Csg(off) VGS = –10V, f = 1MHz – – 5 pF Note 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 3%. |
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