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3D7010G-250 Datasheet(PDF) 3 Page - Data Delay Devices, Inc. |
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3D7010G-250 Datasheet(HTML) 3 Page - Data Delay Devices, Inc. |
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3 / 4 page  3D7010 Doc #96004 DATA DELAY DEVICES, INC. 3 12/2/96 3 Mt. Prospect Ave. Clifton, NJ 07013 APPLICATION NOTES (CONT’D) custom reference designator identifying the intended frequency and duty cycle of operation. The programmed delay accuracy of the device is guaranteed, therefore, only for the user specified input characteristics. Small input pulse width variation about the selected pulse width will only marginally impact the programmed delay accuracy, if at all. Nevertheless, it is strongly recommended that the engineering staff at DATA DELAY DEVICES be consulted. POWER SUPPLY AND TEMPERATURE CONSIDERATIONS The delay of CMOS integrated circuits is strongly dependent on power supply and temperature. The monolithic 3D7010 programmable delay line utilizes novel and innovative compensation circuitry to minimize the delay variations induced by fluctuations in power supply and/or temperature. The thermal coefficient is reduced to 600 PPM/C, which is equivalent to a variation , over the 0C-70C operating range, of ±3% from the room-temperature delay settings. The power supply coefficient is reduced, over the 4.75V- 5.25V operating range, to ±2% of the delay settings at the nominal 5.0VDC power supply. It is essential that the power supply pin be adequately bypassed and filtered. In addition, the power bus should be of as low an impedance construction as possible. Power planes are preferred. DEVICE SPECIFICATIONS TABLE 2: ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL MIN MAX UNITS NOTES DC Supply Voltage VDD -0.3 7.0 V Input Pin Voltage VIN -0.3 VDD+0.3 V Input Pin Current IIN -1.0 1.0 mA 25C Storage Temperature TSTRG -55 150 C Lead Temperature TLEAD 300 C 10 sec TABLE 3: DC ELECTRICAL CHARACTERISTICS (0C to 70C, 4.75V to 5.25V) PARAMETER SYMBOL MIN MAX UNITS NOTES Static Supply Current* IDD 15 mA High Level Input Voltage VIH 2.0 V Low Level Input Voltage VIL 0.8 V High Level Input Current IIH 10 µA VIH = VDD Low Level Input Current IIL -250 µA VIL = 0V High Level Output Current IOH -4.0 mA VDD = 4.75V VOH = 2.4V Low Level Output Current IOL 4.0 mA VDD = 4.75V VOL = 0.4V Output Rise & Fall Time TR & TF 2 ns CLD = 5 pf *IDD(Dynamic) = 10 * CLD * VDD * F Input Capacitance = 10 pf typical where: CLD = Average capacitance load/tap (pf) Output Load Capacitance (CLD) = 25 pf max F = Input frequency (GHz) |
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