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SSM02N60P Datasheet(PDF) 5 Page - List of Unclassifed Manufacturers |
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SSM02N60P Datasheet(HTML) 5 Page - List of Unclassifed Manufacturers |
5 / 6 page www.SiliconStandard.com 5 of 6 SSM02N60P Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 0 1 2 3 4 5 -50 0 50 100 150 T j , Junction Temperature ( o C ) 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V SD (V) T j = 150 o C T j = 25 o C 0 2 4 6 8 10 12 14 16 02468 10 12 14 16 18 20 Q G , Total Gate Charge (nC) I D =2A V DS =320V V DS =400V V DS =480V 10 100 1000 1 5 9 131721 2529 V DS (V) f=1.0MHz Ciss Coss Crss Rev.2.01 6/06/2003 |
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