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2N3847 Datasheet(PDF) 2 Page - Microsemi Corporation

Part # 2N3847
Description  NPN POWER SILICON TRANSISTOR
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N3847 Datasheet(HTML) 2 Page - Microsemi Corporation

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2N3846, 2N3847 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
IC = 1 Adc; VCE = 3.0 Vdc
IC = 5 Adc; VCE = 3.0 Vdc
IC = 10 Adc; VCE = 3.0 Vdc
hFE
70
40
12
240
60
Base-Emitter Voltage
VCE = 3 Vdc; IC = 10 Adc
VBE
1.20
Vdc
Base-Emitter Saturated Voltage
IB = 1.6 Adc; IC = 10 Adc
VBE(sat)
1.30
Vdc
Collector-Emitter Saturated Voltage
IB = 1.6 Adc; IC = 10 Adc
VCE(sat)
0.75
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1 MHz
h
fe
10
35
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 5 Adc, VCE = 10 Vdc, f = 1 kHz
hfe
50
250
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Cobo
750
pF
SWITCHING CHARACTERISTICS
Turn-On Time
VBE(off) ~ -7.5 Vdc; IC = 10 Adc;
IB1 = 2 Adc; IB2 = -2 Adc; RL = 15Ω
ton
4
µs
Turn-Off Time
VBE(off) ~ -7.5 Vdc; IC = 10 Adc;
IB1 = 2 Adc; IB2 = 2 Adc; RL = 15Ω
toff
7
µs
SAFE OPERATING AREA
DC Tests
TC = +100
0C; V
CE = 0 Vdc, IC = 0 Adc (See Figure 3 on Mil-PRF-19500/412)
Test 1
VCE = 7.5 Vdc; IC = 20 Adc; tp = 1.0 s; 1 cycle
Test 2
VCE = 200 Vdc; IC = 100 mAdc; tp = 1.0 s, 1 cycle
Test 3
VCE = 58 Vdc; IC = 1.0 Adc; tp = 1.0 s, 1 cycle
Burnout by Pulsing (2N3847 only)
TC = +100
0C; V
CE = 300 Vdc; IC = 20 mAdc; tp = 1.0 s, 1 cycle
Unclamped Inductive Sweep
TC = +100
0C; I
C = 20 Adc; IB = 2 Adc (See Figure 4 on Mil-PRF-19500/412)
Clamped Inductive Sweep
TC = +100
0C; I
C = 20 Adc; IB = 2 Adc (See Figure 5 on Mil-PRF-19500/412)
3) Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


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