BUK7105-40AIE datasheet(5/16 Pages) PHILIPS

Part #	BUK7105-40AIE

Description	TrenchPLUS standard level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

BUK71/7905-40AIE

TrenchPLUS standard level FET

Product data

Rev. 04 — 6 February 2004

5 of 16

9397 750 12341

6.

Characteristics

Table 5:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source breakdown

voltage

ID = 0.25 mA; VGS =0V

Tj =25 °C

40

--V

Tj = −55 °C

36

--V

VGS(th)

gate-source threshold voltage ID = 1 mA; VDS =VGS;

Figure 9

Tj =25 °C

2

34V

Tj = 175 °C

1

--V

Tj = −55 °C

-

4.4

V

IDSS

drain-source leakage current

VDS =40V; VGS =0V

Tj =25 °C

-

0.1

10

µA

Tj = 175 °C

-

250

µA

V(BR)GSS

gate-source breakdown

voltage

IG = ±1 mA;

−55 °C<Tj < 175 °C

20

22

-

V

IGSS

gate-source leakage current

VGS = ±10 V; VDS =0V

Tj =25 °C

-

22

1000

nA

Tj = 175 °C-

-

10

µA

RDSon

drain-source on-state

resistance

VGS = 10 V; ID =50A;

Figure 7 and 8

Tj =25 °C

-

4.5

5

m

Ω

Tj = 175 °C

-

9.5

m

Ω

RD(Is)on

drain-Isense on-state

resistance

VGS = 10 V; ID = 100 mA;

Figure 16

Tj =25 °C

0.98

1.08

1.18

Ω

Tj = 175 °C

1.86

2.05

2.24

Ω

ID/Isense

ratio of drain current to sense

current

VGS >10V;

−55 °C<Tj < 175 °C

450

500

550

Dynamic characteristics

Qg(tot)

total gate charge

VGS = 10 V; VDS =32V;

ID =25A; Figure 14

-

120

127

nC

Qgs

gate-source charge

-

19

22

nC

Qgd

gate-drain (Miller) charge

-

50

60

nC

Ciss

input capacitance

VGS =0V; VDS =25V;

f = 1 MHz; Figure 12

-

4300

5000

pF

Coss

output capacitance

-

1400

1670

pF

Crss

reverse transfer capacitance

-

820

1100

pF

td(on)

turn-on delay time

VDS =30V; RL = 1.2 Ω;

VGS = 10 V; RG =10 Ω

-35

-

nS

tr

rise time

-

115

-

nS

td(off)

turn-off delay time

-

155

-

nS

tf

fall time

-

110

-

nS

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