IGB03N120H2 datasheet(2/13 Pages) INFINEON

Part #	IGB03N120H2

Description	HighSpeed 2-Technology

Download	13 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

Logo

2 / 13 page

IGP03N120H2,

IGB03N120H2

IGW03N120H2

Power Semiconductors

2

Rev. 2, Mar-04

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

R th JC

2.0

Thermal resistance,

junction – ambient

R th JA

P-TO-220-3-1

P-TO-247-3-1

62

SMD version, device on PCB

1)

R th JA

P-TO-263 (D

2PAK)

40

K/W

Electrical Characteristic,

at Tj = 25

°C, unless otherwise specified

Value

Parameter

Symbol

Conditions

min.

Typ.

max.

Unit

Static Characteristic

Collector-emitter breakdown voltage

V (BR )C ES V GE=0V, IC=300

µA

1200

-

Collector-emitter saturation voltage

V CE(sat )

V GE = 15V, IC =3A

T j=25

°C

T j=150

°C

V GE = 10V, IC =3A,

T j=25

°C

-

2.2

2.5

2.4

2.8

-

Gate-emitter threshold voltage

V GE(th )

I C =90

µA,VCE=VGE

2.1

3

3.9

V

Zero gate voltage collector current

I CES

V CE= 1200V, V GE=0V

T j=25

°C

T j=150

°C

-

20

80

µA

Gate-emitter leakage current

I GES

V CE=0V ,V GE =20V

-

100

nA

Transconductance

g fs

V CE= 20V, IC=3A

-

2

-

S

Dynamic Characteristic

Input capacitance

C is s

-

205

-

Output capacitance

C oss

-

24

-

Reverse transfer capacitance

C rss

V CE= 25V,

V GE=0V,

f

=1MHz

-

7

-

pF

Gate charge

Q Ga te

V CC=960V, IC =3A

V GE=15V

-

22

-

nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

L E

P-TO-220-3-1

P-TO-247-3-1

-

7

13

-

nH

1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

Similar Part No. - IGB03N120H2

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IGB01N120H2	390Kb / 13P	HighSpeed 2-Technology Rev. 2, Mar-04
	IGB01N120H2	1Mb / 12P	HighSpeed 2-Technology Rev. 2.4 Oct. 07
	IGB01N120H2	1Mb / 12P	HighSpeed 2-Technology Rev. 2.4 Oct. 07

More results

Similar Description - IGB03N120H2

Manufacturer	Part #	Datasheet	Description
Infineon Technologies A...	IGB01N120H2	1Mb / 12P	HighSpeed 2-Technology Rev. 2.4 Oct. 07
	IGP03N120H2	346Kb / 13P	HighSpeed 2-Technology Rev. 2.6 Febr. 08
	IGB01N120H2	390Kb / 13P	HighSpeed 2-Technology Rev. 2, Mar-04
	IGP01N120H2	912Kb / 13P	HighSpeed 2-Technology Rev. 2.4 Sept. 07
	IGA03N120H2	201Kb / 10P	HighSpeed 2-Technology Mar-04, Rev. 2.0
TE Connectivity Ltd	114-94706	1Mb / 26P	DT Highspeed DT Highspeed 07 MAR 2023 Rev. B
Infineon Technologies A...	IKP03N120H2	431Kb / 15P	HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2, Mar-04
	IKP03N120H2	381Kb / 15P	HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2.5 Sept. 08
	IKB01N120H2	385Kb / 14P	HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Rev. 2.3 May 06
	IKA03N120H2	335Kb / 14P	HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode Mar-04, Rev. 2

More results

IGB03N120H2 Datasheet(PDF) 2 Page - Infineon Technologies AG

IGB03N120H2 Datasheet(HTML) 2 Page - Infineon Technologies AG

Similar Part No. - IGB03N120H2

Similar Description - IGB03N120H2

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

Datasheet Download

Link URL