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NTE5485 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE5485 Datasheet(HTML) 1 Page - NTE Electronics |
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1 / 2 page  NTE5480 thru NTE5487 Silicon Controlled Rectifier (SCR) 8 Amp Description: The NTE5480 through NTE5487 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type package suited for industrial and consumer applications. These 8 amp devices are available in volt- ages ranging from 25V to 600V. Features: D Uniform Low–Level Noise–Immune Gate Triggering: IGT = 10mA Typ @ TC = +25°C D Low Forward “ON” Voltage: vT = 1V Typ @ 5A @ +25°C D High Surge–Current Capability: ITSM = 100A Peak D Shorted Emitter Construction Absolute Maximum Ratings: (TJ = –40° to +100°C unless otherwise specified) Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM or VRRM NTE5480 25V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5481 50V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5482 100V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5483 200V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5484 300V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5485 400V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5486 500V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5487 (This device is discontinued) 600V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Current RMS, IT(RMS) 8A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Forward Surge Current (One Cycle, 60Hz, TJ = –40° to +100°C, ITSM 100A . . . . . . . . . . . . . . . Circuit Fusing (t ≤ 8.3ms, TJ = –40° to +100°C), I2t 40A2s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Gate Power, PGM 5W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Average Gate Power, PG(AV) 0.5W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Gate Current, IGM 2A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Gate Voltage (Note 2), VGM 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Temperature Range, TJ –40 ° to +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –40 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Thermal Resistance, Junction–to–Case, RthJC 1.5 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical Thermal Resistance, Case–to–Ambient, RthJA 50 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage applied exceeds the rated blocking voltage. Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a negative potential applied to the anode. |
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Similar Description - NTE5485 |
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