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MR16R1628EG0-CT9 Datasheet(PDF) 9 Page - Samsung semiconductor

Part # MR16R1628EG0-CT9
Description  Key Timing Parameters
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

MR16R1628EG0-CT9 Datasheet(HTML) 9 Page - Samsung semiconductor

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Page 8
MR16R1624(8/G)EG0
MR18R1624(8/G)EG0
Version 1.0 May 2004
AC Electrical Specifications
Adjusted
∆T
PD Specification
Table 8: AC Electrical Specifications
Symbol
Parameter and Conditions
Min
Typ
Max
Unit
ZL
Module Impedance of RSL Signals
25.2
28
30.8
ZUL-CMOS
Module Impedance of SCK and CMOS signals
23.8
28
32.2
TPD
Propagation Delay variation of RSL signals. Average clock
delay from finger to finger of all RSL clock nets (CTM,
CTMN, CFM, and CFMN)
-
See
Table10a,b
ns
∆T
PD
Propagation delay variation of RSL signals with respect to TPD
b,c
for 4 and 8 device modules
-21
21
ps
Propagation delay variation of RSL signals with respect to TPD
b,c
for 16 device modules
-24
24
ps
∆T
PD-CMOS
Propagation delay variation of SCK signals with respect to an
average clock delay
-250
250
ps
∆T
PD-SCK,CMD
Propagation delay variation of CMD signals with respect to SCK
signal
-200
200
ps
Vα/VIN
Attenuation Limit
See
Table10a
%
VXF/VIN
Forward crosstalk coefficient (300ps input rise time @ 20%-80%)
See
Table10a
%
VXB/VIN
Backward crosstalk coefficient (300ps input rise time @ 20%-
80%)
See
Table10a
%
a. Table 10 lists parameters and specifications for different storage capacity RIMM Modules that use 256Mb or 288Mb RDRAM devices.
b. TPD or Average clock delay is defined as the delay from finger to finger of RSL signal.
c. If the RIMM module meets the following specification, then it is compliant to the specification. If the RIMM module does not meet these specifica
tions, then the specification can be adjusted by the “Adjusted
∆T
PD Specification“ table 9 below.
Table 9: Adjusted
∆T
PD Specification
Symbol
Parameter and Conditions
Adjusted Min/Max
Absolute
Min / Max
Unit
∆T
PD
Propagation delay variation of RSL signals with respect to
TPD for 4 and 8 device modules
+/-[20+(18*N*
∆Z0)]a
-30
30
ps
Propagation delay variation of RSL signals with respect to
TPD for 16 device modules
+/-[24+(18*N*
∆Z0)]a
-50
50
ps
a. Where:
N = Number of RDRAM devices installed on the RIMM module
∆Z0 = delta Z0% = (max Z0 - min Z0)/(min Z0)
(max Z0 and min Z0 are obtained from the loaded (high impedance) impedance coupons of all RSL layers on the modules)


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