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HBFP0405 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers

Part # HBFP0405
Description  High Performance Isolated Collector Silicon Bipolar Transistor
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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HBFP0405 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers

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HBFP-0405 Absolute Maximum Ratings
Absolute
Symbol
Parameter
Units
Maximum[1]
V
EBO
Emitter-Base Voltage
V
1.5
V
CBO
Collector-Base Voltage
V
15.0
V
CEO
Collector-Emitter Voltage
V
4.5
I
C
Collector Current
mA
12
P
T
Power Dissipation [2]
mW
54
T
j
Junction Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
Thermal Resistance:
θ
jc = 550°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. PT limited by maximum ratings.
Electrical Specifications, TC = 25°C
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
DC Characteristics
BVCEO Collector-Emitter Breakdown Voltage
IC = 1 mA, open base
V
4.5
ICBO
Collector-Cutoff Current
VCB = 5 V, IE = 0
nA
150
IEBO
Emitter-Base Cutoff Current
VEB = 1.5 V, IC = 0
µA15
hFE
DC Current Gain
VCE = 2 V, IC = 2 mA
—
50
80
150
RF Characteristics
FMIN
Minimum Noise Figure
IC = 2 mA, VCE = 2 V, f = 1.8 GHz
dB
1.2
1.5
Ga
Associated Gain
IC = 2 mA, VCE = 2 V, f = 1.8 GHz
dB
16.5
18
|S 21|
2
Insertion Power Gain
IC = 5 mA, VCE = 2 V, f = 1.8 GHz
dB
17
P-1dB
Power Output @ 1 dB
IC = 5 mA, VCE = 2 V, f = 1.8 GHz dBm
5
Compression Point


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