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TF222 Datasheet(PDF) 1 Page - Sanyo Semicon Device

Part # TF222
Description  N-channel Junction FET
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

TF222 Datasheet(HTML) 1 Page - Sanyo Semicon Device

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TF222
No.7281-1/4
Electret Condenser Microphone Applications
Features
Especially suited for use in electret condenser
microphone.
Ultrasmall package permitting TF222 applied
sets to be made small and slim.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Gate-to-Drain Voltage
VGDO
--20
V
Gate Current
IG
10
mA
Drain Current
ID
1mA
Allowable Power Dissipation
PD
100
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDO
IG=--100µA
--20
V
Cutoff Voltage
VGS(off)
VDS=2V, ID=1µA
--0.1
--1.0
V
Drain Current
IDSS
VDS=2V, VGS=0
140*
350*
µA
Forward Transfer Admittance
yfs
VDS=2V, VGS=0, f=1kHz
0.5
mS
Input Capacitance
Ciss
VDS=2V, VGS=0, f=1MHz
5.0
pF
Reverse Transfer Capacitance
Crss
VDS=2V, VGS=0, f=1MHz
1.1
pF
Continued on next page.
* : The TF222 is classified by IDSS as follows : (unit : µA)
Rank
B4
B5
IDSS
140 to 240
210 to 350
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7281A
TF222
Package Dimensions
unit : mm
2207A
[TF222]
90503 TS IM / O3002 TS IM TA-3621
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-channel Junction FET
Preliminary
1 : Drain
2 : Source
3 : Gate
SANYO : SSFP
0.25
0.2
1.4
0.45
1
3
2
0.1
1
3
2
Top View
Side View
Side View
Bottom View


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