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TF222 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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TF222 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 4 page TF222 No.7281-1/4 Electret Condenser Microphone Applications Features • Especially suited for use in electret condenser microphone. • Ultrasmall package permitting TF222 applied sets to be made small and slim. • Excellent voltage characteristics. • Excellent transient characteristics. • Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Gate-to-Drain Voltage VGDO --20 V Gate Current IG 10 mA Drain Current ID 1mA Allowable Power Dissipation PD 100 mW Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Gate-to-Drain Breakdown Voltage V(BR)GDO IG=--100µA --20 V Cutoff Voltage VGS(off) VDS=2V, ID=1µA --0.1 --1.0 V Drain Current IDSS VDS=2V, VGS=0 140* 350* µA Forward Transfer Admittance yfs VDS=2V, VGS=0, f=1kHz 0.5 mS Input Capacitance Ciss VDS=2V, VGS=0, f=1MHz 5.0 pF Reverse Transfer Capacitance Crss VDS=2V, VGS=0, f=1MHz 1.1 pF Continued on next page. * : The TF222 is classified by IDSS as follows : (unit : µA) Rank B4 B5 IDSS 140 to 240 210 to 350 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN7281A TF222 Package Dimensions unit : mm 2207A [TF222] 90503 TS IM / O3002 TS IM TA-3621 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. N-channel Junction FET Preliminary 1 : Drain 2 : Source 3 : Gate SANYO : SSFP 0.25 0.2 1.4 0.45 1 3 2 0.1 1 3 2 Top View Side View Side View Bottom View |
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