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PSS9012G Datasheet(PDF) 3 Page - NXP Semiconductors |
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PSS9012G Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 9 page 2004 Aug 10 3 Philips Semiconductors Product specification 20 V PNP general purpose transistors PSS9012 series THERMAL CHARACTERISTICS Note 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air; note 1 175 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −35 V; IE =0 −−−100 nA VCB = −35 V; IE = 0; Tj = 150 °C −−−50 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0 −−−100 nA hFE DC current gain VCE = −1 V; IC = −500 mA 40 −− hFE DC current gain VCE = −1 V; IC = −50 mA PSS9012G 112 − 166 PSS9012H 144 − 202 VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −10 mA −−60 −250 mV IC = −500 mA; IB = −50 mA −−230 −600 mV VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA −−1 −1.2 V VBEon base-emitter turn on voltage VCE = −1 V; IC = −100mA −−760 −1000 mV Cc collector capacitance VCB = −6 V; IE =Ie =0; f = 1 MHz − 6 − pF |
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