SI1913DH datasheet(2/5 Pages) VISHAY

Part #	SI1913DH

Description	Dual P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si1913DH

Vishay Siliconix

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Document Number: 71965

S-21482—Rev. A, 26-Aug-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -100 mA

-0.45

1

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

VDS = -16 V, VGS = 0 V

-1

m

Zero Gate Voltage Drain Current

IDSS

VDS = -16 V, VGS = 0 V, TJ = 85_C

-5

mA

On-State Drain Currenta

ID(on)

VDS = -5 V, VGS = -4.5 V

-2

A

VGS = -4.5 V, ID = -0.88 A

0.400

0.490

Drain-Source On-State Resistancea

rDS(on)

VGS = -2.5 V, ID = -0.71 A

0.610

0.750

W

DS(on)

VGS = -1.8 V, ID = -0.2 A

0.850

1.10

Forward Transconductancea

gfs

VDS = -10 V, ID = -0.88 A

1.5

S

Diode Forward Voltagea

VSD

IS = -0.47 A, VGS = 0 V

-0.85

-1.2

V

Dynamicb

Total Gate Charge

Qg

1.2

1.8

Gate-Source Charge

Qgs

VDS = -10 V, VGS = -4.5 V, ID = -0.88 A

0.3

nC

Gate-Drain Charge

Qgd

0.21

Turn-On Delay Time

td(on)

18

30

Rise Time

tr

VDD = -10 V, RL = 20 W

25

40

Turn-Off Delay Time

td(off)

VDD = -10 V, RL = 20 W

ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W

15

45

ns

Fall Time

tf

12

20

Reverse Recovery Time

trr

IF = 0.47 A, di/dt = 100 A/ms

30

60

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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