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NTE5675 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE5675 Datasheet(HTML) 1 Page - NTE Electronics |
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1 / 2 page  NTE5673 thru NTE5677 TRIAC – 15 Amp Description: The NTE5673 through NTE5677 series of meduim power TRIACs are bidirectional triode thyristors which may be switched from off–state to conduction for either polarity od applied voltage with positive or negative gate triggering. These devices are designed for control of AC loads in applications such as lighting, heating, and motor speed control as well as static switching relays. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage and peak Reverse Voltage (TJ = +100°C), VDRM, VRRM NTE5673 200V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5675 400V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5676 500V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NTE5677 600V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . On–State Current RMS (TC = +75°C, 360° Conduction), IT(RMS) 15A . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Surge (Non–Repetitive) On–State Current (One Full Cycle, 50 or 60Hz), ITSM 150A . . . . . . . . Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM 20W . . . . . . . . . . . . . . . . . . . . . . . . . . . Average Gate–Power Dissipation, PG(AV) 0.5W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Gate–Trigger Current (3 µs Max), IGTM 2A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature Range (TJ), Topr –40 ° to +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –40 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Case, RthJC 1.8 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Peak Off–State Current (Ir = 100A Peak) IDROM – – 2 mA Maximum On–State Voltage (Ir = 100A Peak) VT – – 2.2 V DC Gate Trigger Current (Main Terminal Voltage = 24V, RL = 12Ω) MT2 (+), G (+); MT2 (–), G (–) Quads I – III MT2 (+), G (–); MT2 (–), G (+) Quads II – IV IGT – – – – 50 80 mA DC Gate Trigger Voltage (Main Terminal Voltage = 24V, RL = 12Ω) VGT – – 2.5 V DC Holding Current (Gate Open) IH – – 60 mA Gate Controlled Turn–On Time (VD = VDROM, IT = 10A Peak, IGT = 300mA, tr = 0.1µs) tgt – 3.0 – µs Critical Rate–of–Rise of Off–State Voltage (VD = VDROM, TC = +100°C, Gate Open) Critical dv/dt – 40 – V/ µs Critical Rate–of–Rise of Commutation (VD = VDROM, If = IT(RMS), TC = +100°C, Gate Open) Commutating dv/dt – 5 – V/ µs |
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