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ZXMN4A06G Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXMN4A06G Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 7 page ZXMN4A06G ISSUE 1 - MAY 2002 2 PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 40 V Gate-Source Voltage V GS 20 V Continuous Drain Current V GS=10V; TA=25°C(b) V GS=10V; TA=70°C(b) V GS=10V; TA=25°C(a) I D 7.0 5.6 5.0 A Pulsed Drain Current (c) I DM 22 A Continuous Source Current (Body Diode) (b) I S 5.4 A Pulsed Source Current (Body Diode)(c) I SM 22 A Power Dissipation at T A=25°C (a) Linear Derating Factor P D 2.0 16 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor P D 3.9 31 W mW/°C Operating and Storage Temperature Range T j:Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 62.5 °C/W Junction to Ambient (b) RθJA 32.2 °C/W THERMAL RESISTANCE NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10 s - pulse width limited by maximum junction temperature. |
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