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ZXMN4A06G Datasheet(PDF) 4 Page - Zetex Semiconductors |
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ZXMN4A06G Datasheet(HTML) 4 Page - Zetex Semiconductors |
4 / 7 page ZXMN4A06G ISSUE 1 - MAY 2002 4 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS 40 V I D=250 A, V GS=0V Zero Gate Voltage Drain Current I DSS 1 AV DS=40V, VGS=0V Gate-Body Leakage I GSS 100 nA V GS=±20V, VDS=0V Gate-Source Threshold Voltage V GS(th) 1.0 V I D =250 A, V DS=VGS Static Drain-Source On-State Resistance (1) R DS(on) 0.050 0.075 V GS=10V, ID=4.5A V GS=4.5V, ID=3.2A Forward Transconductance (3) g fs 8.7 S V DS=15V,ID=2.5A DYNAMIC (3) Input Capacitance C iss 770 pF V DS=40V,VGS=0V, f=1MHz Output Capacitance C oss 92 pF Reverse Transfer Capacitance C rss 61 pF SWITCHING(2) (3) Turn-On Delay Time t d(on) 2.55 ns V DD =30V, ID=2.5A R G=6.0 ,V GS=10V (refer to test circuit) Rise Time t r 4.45 ns Turn-Off Delay Time t d(off) 28.61 ns Fall Time t f 7.35 ns Total Gate Charge Q g 18.2 nC V DS=30V,VGS=10V, ID=2.5A (refer to test circuit) Gate-Source Charge Q gs 2.1 nC Gate-Drain Charge Q gd 4.5 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.8 0.95 V T J=25°C, IS=2.5A, V GS=0V Reverse Recovery Time (3) t rr 19.86 ns T J=25°C, IF=2.5A, di/dt= 100A/ µs Reverse Recovery Charge (3) Q rr 16.36 nC ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. |
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