ZXMN4A06G

ISSUE 1 - MAY 2002

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V

(BR)DSS

40

V

I

A, V

Zero Gate Voltage Drain Current

I

DSS

1

AV

Gate-Body Leakage

I

GSS

100

nA

V

Gate-Source Threshold Voltage

V

GS(th)

1.0

V

I

D

=250 A, V

Static Drain-Source On-State

Resistance (1)

R

DS(on)

0.050

0.075

V

V

Forward Transconductance (3)

g

fs

8.7

S

V

DYNAMIC (3)

Input Capacitance

C

iss

770

pF

V

f=1MHz

Output Capacitance

C

oss

92

pF

Reverse Transfer Capacitance

C

rss

61

pF

SWITCHING(2) (3)

Turn-On Delay Time

t

d(on)

2.55

ns

V

R

,V

(refer to test circuit)

Rise Time

t

r

4.45

ns

Turn-Off Delay Time

t

d(off)

28.61

ns

Fall Time

t

f

7.35

ns

Total Gate Charge

Q

g

18.2

nC

V

(refer to test circuit)

Gate-Source Charge

Q

gs

2.1

nC

Gate-Drain Charge

Q

gd

4.5

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

V

SD

0.8

0.95

V

T

V

Reverse Recovery Time (3)

t

rr

19.86

ns

T

di/dt= 100A/

µs

Reverse Recovery Charge (3)

Q

rr

16.36

nC

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Width

≤300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.