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AO3415 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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2 / 4 page AO3415, AO3415L Symbol Min Typ Max Units BVDSS -20 V -1 TJ=55°C -5 ±1 µA ±10 µA VGS(th) -0.3 -0.55 -1 ID(ON) -25 A 35 43 TJ=125°C 48 60 45 54 m Ω 56 73 m Ω gFS 816 S VSD -0.78 -1 V IS -2.2 A Ciss 1450 pF Coss 205 pF Crss 160 pF Rg 6.5 Ω Qg 17.2 nC Qgs 1.3 nC Qgd 4.5 nC tD(on) 9.5 ns tr 17 ns tD(off) 94 ns tf 35 ns trr 31 ns Qrr 13.8 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-1.8V, ID=-2A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-4A Reverse Transfer Capacitance Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS=VGS ID=-250µA VDS=-16V, VGS=0V VDS=0V, VGS=±8V Zero Gate Voltage Drain Current VDS=0V, VGS=±4.5V IGSS m Ω VGS=-2.5V, ID=-4A IS=-1A,VGS=0V VDS=-5V, ID=-4A IF=-4A, dI/dt=100A/µs VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=-4.5V, VDS=-10V, ID=-4A Gate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω Turn-Off Fall Time Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Gate-Body leakage current Gate resistance VGS=0V, VDS=0V, f=1MHz RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. |
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