AO6409L datasheet(1/4 Pages) ETC

Part #	AO6409L

Description	P-Channel Enhancement Mode Field Effect Transistor

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Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

47.5

62.5

74

110

RθJL

37

50

Junction and Storage Temperature Range

A

PD

°C

2

1.28

-55 to 150

TA=70°C

ID

-5.0

-4.2

-30

Pulsed Drain Current

B

Power Dissipation

A

TA=25°C

Continuous Drain

Current

A

Maximum

Units

Parameter

TA=25°C

TA=70°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±8

Gate-Source Voltage

Drain-Source Voltage

-20

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

W

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

AO6409, AO6409L ( Green Product )

P-Channel Enhancement Mode Field Effect Transistor

Rev

2: Nov 2004

Features

VDS (V) = -20V

ID = -5 A

RDS(ON) < 45mΩ (VGS = -4.5V)

RDS(ON) < 56mΩ (VGS = -2.5V)

RDS(ON) < 75mΩ (VGS = -1.8V)

ESD Rating: 3000V HBM

General Description

The AO6409 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate

voltages as low as 1.8V. This device is suitable for use as a

load switch or in PWM applications. It is ESD protected.

AO6409L ( Green Product ) is offered in a lead-free

package.

TSOP6

Top View

G

D

S

D

1

2

3

6

5

4

D

S

G

Alpha & Omega Semiconductor, Ltd.

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