EB-ASG101-2000 datasheet(5/6 Pages) ETC

Part #	EB-ASG101-2000

Description	DC-3000 MHz SiGe HBT Amplifier

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Manufacturer	ETC [List of Unclassifed Manufacturers]

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March. 2004

1) S11 & S22 can be improved, at a specific frequency, by moving

an input shunt capacitor (C2) along an input transmission line.

2) OIP3 is measured with two tones at an output power of +5 dBm/tone

separated by 1 MHz.

Gain vs. Temperature

Application Circuit: 2000 MHz

Typical Performance

Frequency

2000 MHz

Magnitude S21

15 dB

Magnitude S11

1)

-20 dB

Magnitude S22

1)

-17 dB

Output P1dB

18 dBm

Output IP3

2)

31 dBm

Noise Figure

4.0 dB

Supply Voltage

4.5 V

Current

55 mA

Board Layout (FR4, 40x40 mm

2, 0.8T)

S-parameters

Schematic

ASG101

L2=22nH

R1=10 k

Ω

L1=22 nH

C3=100pF

Vs=4.5V

RF IN

RF OUT

C4=

100 pF

C5=

1000 pF

C1=2 pF

50

Ω

ASG101

5.5 mm

C2=1.5 pF

50

Ω

4.5 mm

C6=

1

µF

-60

-40

-20

0

20

40

60

80

100

10

12

14

16

18

20

Frequency = 2GHz

1600

1700

1800

1900

2000

2100

2200

2300

2400

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

Frequency (MHz)

+ 85 ΒC

+ 25 ΒC

- 40 ΒC

1600

1700

1800

1900

2000

2100

2200

2300

2400

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

Frequency (MHz)

+ 85 ΒC

+ 25 ΒC

- 40 ΒC

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EB-ASG101-2000 Datasheet(PDF) 5 Page - List of Unclassifed Manufacturers

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