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BS616LV1012 Datasheet(PDF) 1 Page - Brilliance Semiconductor |
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BS616LV1012 Datasheet(HTML) 1 Page - Brilliance Semiconductor |
1 / 9 page Revision 1.0 Apr. 2004 1 R0201-BS616LV1012 Very Low Power/Voltage CMOS SRAM 64K X 16 bit • Wide Vcc operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade : 22mA (@55ns) operating current I- grade : 23mA (@55ns) operating current C-grade : 17mA (@70ns) operating current I- grade : 18mA (@70ns) operating current 0.4uA (Typ.) CMOS standby current • High speed access time : -55 55ns -70 70ns • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE and OE options • I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV1012 is a high performance, very low power CMOS Static Random Access Memory organized as 65,536 words by 16 bits and operates from a wide range of 2.4V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.4uA at 3V/25oC and maximum access time of 55ns at 3V/85oC. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers. The BS616LV1012 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV1012 is available in the JEDEC standard 44-pin TSOP Type II and 48-pin BGA package. DESCRIPTION FEATURES Row Decoder Memory Array 512 x 2048 Column I/O Write Driver Sense Amp Column Decoder Data Buffer Output A3 A2 A1 Data Buffer Input Control Gnd Vcc OE WE CE DQ15 DQ0 A5 A6 A7 A15 A13 16 16 16 16 14 128 2048 BLOCK DIAGRAM 512 18 A14 A12 A9 A4 A0 A11 A8 Address Input Buffer A10 Address Input Buffer . . . . UB . . . . LB PRODUCT FAMILY PIN CONFIGURATIONS Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice. BS616LV1012 G H F E D C B A 1 234 5 A9 A8 NC IO15 NC A12 NC A11 A10 A13 WE IO7 IO14 VCC VSS IO9 IO13 A14 IO12 IO11 IO10 NC NC A5 IO8 LB UB OE A3 A0 A15 IO5 NC A7 A6 IO4 IO3 IO1 IO6 VSS VCC IO2 A4 A1 CE A2 IO0 NC 6 A4 A3 A2 A1 A0 CE DQ0 DQ1 DQ2 DQ3 VCC GND DQ4 DQ5 DQ6 DQ7 WE A15 A14 A13 A12 NC A5 A6 A7 OE UB LB DQ15 DQ14 DQ13 DQ12 GND VCC DQ11 DQ10 DQ9 DQ8 NC A8 A9 A10 A11 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 BS616LV1012EC BS616LV1012EI BSI POWER DISSIPATION SPEED (ns) STANDBY (ICCSB1, Max) Operating (ICC, Max) PRODUCT FAMILY OPERATING TEMPERATURE Vcc RANGE 55ns:2.8~3.6V 70ns:2.5~3.6V Vcc=3.0V Vcc=3.0V 55ns Vcc=3.0V 70ns PKG TYPE BS616LV1012EC TSOP2-44 BS616LV1012AC +0 O C to +70 O C 2.4V ~ 3.6V 55/70 1.3uA 22mA 17mA BGA-48-0608 BS616LV1012EI TSOP2-44 BS616LV1012AI -40 O C to +85 O C 2.4V ~ 3.6V 55/70 2.5uA 23mA 18mA BGA-48-0608 |
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