DN2470

Rev. 1

011105

1

Initial Release

Features

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakages

Application

Normally-on switches

Solid state relays

Battery operated systems

Converters

Linear amplifiers

Constant current sources

Telecom

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

±20V

Operating and Storage

Temperature

-55°C to +150°C

Soldering Temperature*

300°C

* Distance of 1.6mm from case for 10 seconds.

Ordering Information

General Description

This

low

threshold

depletion-mode

(normally-on)

transistor

utilizes

an

advanced

vertical

DMOS

structure

and

Supertex's

well-proven

silicon-gate

manufacturing process. This combination produces a

device with the power handling capabilities of bipolar

transistors and with the high input impedance and

positive temperature coefficient inherent in MOS

devices.

Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-

induced secondary breakdown.

Supertex's vertical DMOS FET is ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

Package Option

** “Green” Certified Package

Order Number / Package

TO-252

DN2470K4

700V

42

Ω

500mA

DN2470K4-G **

700V

42

Ω

500mA

DN2470

NR011905

N-Channel Depletion-Mode

Vertical DMOS FET