NTE60 datasheet(1/2 Pages) NTE

Part #	NTE60

Description	Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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NTE60 (NPN) & NTE61 (PNP)

Silicon Complementary Transistors

High Power Audio, Disk Head Positioner

for Linear Applications

Description:

The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type

package designed for high power audio, disk head positioners, and other linear applications.

Features:

D High Safe Operating Area: 250W @ 50V

D For Low Distortion Complementary Designs

D High DC Current Gain: hFE = 25 Min @ IC = 5A

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO(sus)

140V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector–Base Voltage, VCBO

140V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter–Base Voltage, VEBO

5V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Collector Current, IC

20A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Base Current, IB

5A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous Emitter Current, IE

25A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (TC = +25°C), PD

250W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25

°C

1.43W/

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, TJ

–65

° to +200°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, Tstg

–65

° to +200°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal Resistance, Junction–to–Case, RthJC

0.70

°C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), TL

+265

°C

. . . . . . . . . . . . . . . .

Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched comple-

mentary pairs have their gain specification (hFE) matched to within 10% of each other.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF Characteristics

Collector–Emitter Sustaining Voltage

VCEO(sus) IC = 200mA, IB = 0, Note 2

140

–

V

Collector Cutoff Current

ICEX

VCE = 140V, VBE(off) = 1.5V

–

100

µA

VCE = 140V, VBE(off) = 1.5V, TC = +150°C

–

2

mA

ICEO

VCE = 140V, IB = 0

–

250

µA

Emitter Cutoff Current

IEBO

VEB = 5V, IC = 0

–

100

µA

Note 2. Pulse Test: Pulse Width = 300

µs, Duty Cycle = 2%.

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