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NTE60 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE60 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE60 (NPN) & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO(sus) 140V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Base Voltage, VCBO 140V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, VEBO 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Collector Current, IC 20A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Base Current, IB 5A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Emitter Current, IE 25A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Power Dissipation (TC = +25°C), PD 250W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 25 °C 1.43W/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature Range, TJ –65 ° to +200°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +200°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Case, RthJC 0.70 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (During Soldering, 1/16” from Case, 10sec Max), TL +265 °C . . . . . . . . . . . . . . . . Note 1. Matched complementary pairs are available upon request (NTE61MCP). Matched comple- mentary pairs have their gain specification (hFE) matched to within 10% of each other. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Note 2 140 – – V Collector Cutoff Current ICEX VCE = 140V, VBE(off) = 1.5V – – 100 µA VCE = 140V, VBE(off) = 1.5V, TC = +150°C – – 2 mA ICEO VCE = 140V, IB = 0 – – 250 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 100 µA Note 2. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%. |
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