NTE60 datasheet(2/2 Pages) NTE

Part #	NTE60

Description	Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications

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Manufacturer	NTE [NTE Electronics]

Direct Link	http://www.nteinc.com

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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Second Breakdown

Second Breakdown Collector Current

IS/b

VCE = 50V, t = 1s (non–repetitive)

5

–

µA

with Base Forward Bias

VCE = 100V, t = 1s (non–repetitive)

1

–

µA

ON Characteristics

DC Current Gain

hFE

VCE = 2V, IC = 5A

25

–

150

Collector–Emitter Saturation Voltage

VCE(sat)

IC = 5A, IB = 500mA

–

1

V

Base–Emitter On Voltage

VBE(on)

VCE = 2V, IC = 5A

–

2

V

Dynamic Characteristics

Current Gain–Bandwidth Product

fT

VCE = 10V, IC = 500mA, ftest = 0.5MHz

2

–

MHz

Output Capacitance

Cob

VCB = 10V, IE = 0, ftest = 1MHz

–

1000

pF

1.187 (30.16)

.875 (22.2)

Dia Max

.665

(16.9)

.430

(10.92)

Seating

Plane

.040 (1.02)

.312 (7.93) Min

.135 (3.45) Max

.350 (8.89)

Emitter

Collector/Case

Base

.215 (5.45)

.525 (13.35) R Max

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

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