Electronic Components Datasheet Search |
|
K6R4008V1B-I10 Datasheet(PDF) 6 Page - Samsung semiconductor |
|
K6R4008V1B-I10 Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 10 page K6R4008V1B-C/B-L, K6R4008V1B-I/B-P CMOS SRAM PRELIMINARY Rev 2.2 - 6 - May 1999 WRITE CYCLE* * The above parameters are also guaranteed at industrial temperature range. Parameter Symbol K6R4008V1B-10 K6R4008V1B-12 K6R4008V1B-15 Unit Min Max Min Max Min Max Write Cycle Time tWC 10 - 12 - 15 - ns Chip Select to End of Write tCW 7 - 8 - 10 - ns Address Set-up Time tAS 0 - 0 - 0 - ns Address Valid to End of Write tAW 7 - 8 - 10 - ns Write Pulse Width(OE High) tWP 7 - 8 - 10 - ns Write Pulse Width(OE Low) tWP1 10 - 12 - 15 - ns Write Recovery Time tWR 0 - 0 - 0 - ns Write to Output High-Z tWHZ 0 5 0 6 0 7 ns Data to Write Time Overlap tDW 5 - 6 - 7 - ns Data Hold from Write Time tDH 0 - 0 - 0 - ns End Write to Output Low-Z tOW 3 - 3 - 3 - ns Address Data Out Previous Valid Data Valid Data TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH) tAA tRC tOH NOTES(READ CYCLE) 1. WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device. 5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with CS=VIL. 7. Address valid prior to coincident with CS transition low. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) CS Address OE Data out tAA tOLZ tLZ(4,5) tOH tOHZ tRC tOE tCO tPU tPD Valid Data tHZ(3,4,5) 50% 50% VCC Current ICC ISB |
Similar Part No. - K6R4008V1B-I10 |
|
Similar Description - K6R4008V1B-I10 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |