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M5M29GB640C3TTC-12 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1 / 42 page 1 M5M29GB640VP 67,108,864-BIT(8,388,608 - WORDBY 8-BIT/ 4,194,304 - WORD BY16-BIT) 3.3VONLYFLASHMEMORY • Automatic Suspend Enhance - Word/byte write suspend to read - Sector erase suspend to word/byte write - Sector erase suspend to read register report • Automatic sector erase, full chip erase, word write and sector lock/unlock configuration • Status Reply - Detection of program and erase operation comple- tion. - Command User Interface (CUI) - Status Register (SR) • Data Protection Performance - Include boot sectors and parameter and main sectors to be block/unblock • 100,000 minimum erase/program cycles • Common Flash Interface (CFI) • • Package type: - 48-pin TSOP (12mm x 20mm) FEATURES • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VPP=2.7~3.6V - VCC=12 fast production programming - 1.65V~2.5V or 2.7V~3.6V I/O Option (VCCQ) - Operating temperature:-40°C~85°C • Fast access time : 90/120ns • Low power consumption - 9mA maximum active read current, f=5MHz (CMOS input) - 21mA program erase current maximum (VPP=1.65~3.6V) - 7uA typical standby current under power saving mode • Sector architecture - Sector Erase (Sector structure : 4Kword x 2 (boot sectors), 4Kword x 6 (parameter sectors), 32Kword x • Auto Erase (chip & sector) and Auto Program - Automatically program and verify data at specified address A15 A14 A13 A12 A11 A10 A9 A8 A21 A20 WE RP NC WP A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 A16 VCCQ GND Q15 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OE GND CE A0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 M5M29GB640VP 1 M5M29GB640VP 67,108,864-BIT(8,388,608 - WORDBY 8-BIT/ 4,194,304 - WORD BY16-BIT) 3.3VONLYFLASHMEMORY • Automatic Suspend Enhance - Word/byte write suspend to read - Sector erase suspend to word/byte write - Sector erase suspend to read register report • Automatic sector erase, full chip erase, word write and sector lock/unlock configuration • Status Reply - Detection of program and erase operation comple- tion. - Command User Interface (CUI) - Status Register (SR) • Data Protection Performance - Include boot sectors and parameter and main sectors to be block/unblock • 100,000 minimum erase/program cycles • Common Flash Interface (CFI) • 64-bit Protection Register Latch-up protected to 100mA from -1V to VCC+1V • Package type: - 48-pin TSOP (12mm x 20mm) FEATURES • Single power supply operation - 3.0V only operation for read, erase and program operation - VCC=VPP=2.7~3.6V - VCC=12 fast production programming - 1.65V~2.5V or 2.7V~3.6V I/O Option (VCCQ) - Operating temperature:-40°C~85°C • Fast access time : 90/120ns • Low power consumption - 9mA maximum active read current, f=5MHz (CMOS input) - 21mA program erase current maximum (VPP=1.65~3.6V) - 7uA typical standby current under power saving mode • Sector architecture - Sector Erase (Sector structure : 4Kword x 2 (boot sectors), 4Kword x 6 (parameter sectors), 32Kword x 7 (parameter sectors) - Top Boot • Auto Erase (chip & sector) and Auto Program - Automatically program and verify data at specified address 1 FEATURES |
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