M5M29GB640C3TTC-12 datasheet(1/42 Pages) ETC

Part #	M5M29GB640C3TTC-12

Description	3.3V ONLY FLASHMEMORY

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1

M5M29GB640VP

67,108,864-BIT(8,388,608 - WORDBY 8-BIT/ 4,194,304 - WORD BY16-BIT)

3.3VONLYFLASHMEMORY

• Automatic Suspend Enhance

- Word/byte write suspend to read

- Sector erase suspend to word/byte write

- Sector erase suspend to read register report

• Automatic sector erase, full chip erase, word write and

sector lock/unlock configuration

• Status Reply

- Detection of program and erase operation comple-

tion.

- Command User Interface (CUI)

- Status Register (SR)

• Data Protection Performance

- Include boot sectors and parameter and main sectors

to be block/unblock

• 100,000 minimum erase/program cycles

• Common Flash Interface (CFI)

•

• Package type:

- 48-pin TSOP (12mm x 20mm)

FEATURES

• Single power supply operation

- 3.0V only operation for read, erase and program

operation

- VCC=VPP=2.7~3.6V

- VCC=12 fast production programming

- 1.65V~2.5V or 2.7V~3.6V I/O Option (VCCQ)

- Operating temperature:-40°C~85°C

• Fast access time : 90/120ns

• Low power consumption

- 9mA maximum active read current, f=5MHz (CMOS

input)

- 21mA program erase current maximum

(VPP=1.65~3.6V)

- 7uA typical standby current under power saving

mode

• Sector architecture

- Sector Erase (Sector structure : 4Kword x 2 (boot

sectors), 4Kword x 6 (parameter sectors), 32Kword x

• Auto Erase (chip & sector) and Auto Program

- Automatically program and verify data at specified

address

A15

A14

A13

A12

A11

A10

A9

A8

A21

A20

WE

RP

NC

WP

A19

A18

A17

A7

A6

A5

A4

A3

A2

A1

1

2

3

4

5

6

7

8

9

10

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12

13

14

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16

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21

22

23

24

A16

VCCQ

GND

Q15

Q7

Q14

Q6

Q13

Q5

Q12

Q4

VCC

Q11

Q3

Q10

Q2

Q9

Q1

Q8

Q0

OE

GND

CE

A0

48

47

46

45

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43

42

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M5M29GB640VP

1

M5M29GB640VP

67,108,864-BIT(8,388,608 - WORDBY 8-BIT/ 4,194,304 - WORD BY16-BIT)

3.3VONLYFLASHMEMORY

• Automatic Suspend Enhance

- Word/byte write suspend to read

- Sector erase suspend to word/byte write

- Sector erase suspend to read register report

• Automatic sector erase, full chip erase, word write and

sector lock/unlock configuration

• Status Reply

- Detection of program and erase operation comple-

tion.

- Command User Interface (CUI)

- Status Register (SR)

• Data Protection Performance

- Include boot sectors and parameter and main sectors

to be block/unblock

• 100,000 minimum erase/program cycles

• Common Flash Interface (CFI)

• 64-bit Protection Register

Latch-up protected to 100mA from -1V to VCC+1V

• Package type:

- 48-pin TSOP (12mm x 20mm)

FEATURES

• Single power supply operation

- 3.0V only operation for read, erase and program

operation

- VCC=VPP=2.7~3.6V

- VCC=12 fast production programming

- 1.65V~2.5V or 2.7V~3.6V I/O Option (VCCQ)

- Operating temperature:-40°C~85°C

• Fast access time : 90/120ns

• Low power consumption

- 9mA maximum active read current, f=5MHz (CMOS

input)

- 21mA program erase current maximum

(VPP=1.65~3.6V)

- 7uA typical standby current under power saving

mode

• Sector architecture

- Sector Erase (Sector structure : 4Kword x 2 (boot

sectors), 4Kword x 6 (parameter sectors), 32Kword x

7 (parameter sectors)

- Top Boot

• Auto Erase (chip & sector) and Auto Program

- Automatically program and verify data at specified

address

1

FEATURES

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M5M29GB640C3TTC-12 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

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