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MBM29DL64DF Datasheet(PDF) 2 Page - Fujitsu Component Limited.

Part # MBM29DL64DF
Description  FLASH MEMORY CMOS 64 M (8 M X 8/4 M X 16) BIT
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Manufacturer  FUJITSU [Fujitsu Component Limited.]
Direct Link  http://edevice.fujitsu.com/fmd/en/index.html
Logo FUJITSU - Fujitsu Component Limited.

MBM29DL64DF Datasheet(HTML) 2 Page - Fujitsu Component Limited.

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MBM29DL64DF-70
2
(Continued)
The new design concept called FlexBankTM *1 Architecture is implemented. With this concept the device can
execute simultaneous operation between Bank 1, a bank chosen from among the four banks, and Bank 2, a
bank consisting of the three remaining banks. This means that any bank can be chosen as Bank 1. (Refer to
sFUNCTIONAL DESCRIPTION for Simultaneous Operation.)
The standard device offers access times 70 ns, allowing operation of high-speed microprocessors without the
wait. To eliminate bus contention the device has separate chip enable (CE) , write enable (WE) and output enable
(OE) controls.
This device supports pin and command set compatible with JEDEC standard E2PROMs. Commands are written
to the command register using standard microprocessor write timings. Register contents serve as input to an
internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch
addresses and data needed for the programming and erase operations. Reading data out of the device is similar
to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The device is programmed by executing the program command sequence. This invokes the Embedded Program
AlgorithmTM which is an internal algorithm that automatically times the program pulse widths and verifies proper
cell margin. Typically each sector can be programmed and verified in about 0.5 seconds. Erase is accomplished
by executing the erase command sequence. This invokes the Embedded Erase AlgorithmTM which is an internal
algorithm that automatically preprograms the array if it is not already programmed before executing the erase
operation. During erase, the device automatically times the erase pulse widths and verifies the proper cell margin.
Each sector is typically erased and verified in 0.5 second (if already completely preprogrammed) .
The device also features sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The device is erased when shipped from the factory.
The device features single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low VCC detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ7,
by the Toggle Bit feature on DQ6, or the RY/BY output pin. Once the end of a program or erase cycle is completed,
the device internally returns to the read mode.
The device also has a hardware RESET pin. When this pin is driven low, execution of any Embedded Program
Algorithm or Embedded Erase Algorithm is terminated. The internal state machine is then reset to the read
mode. The RESET pin may be tied to the system reset circuitry. Therefore if a system reset occurs during the
Embedded ProgramTM *2 Algorithm or Embedded EraseTM *2 Algorithm, the device is automatically reset to the
read mode and have erroneous data stored in the address locations being programmed or erased. These
locations need rewriting after the reset. Resetting the device enables the system’s microprocessor to read the
boot-up firmware from the Flash memory.
Fujitsu Flash technology combines years of Flash memory manufacturing experience to produce the highest
levels of quality, reliability, and cost effectiveness. The device memory electrically erases the entire chip or all
bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/
word at a time using the EPROM programming mechanism of hot electron injection.
*1 : FlexBankTM is a trademark of Fujitsu Limited.
*2 : Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.


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