10

4, 8 Meg x 32 DRAM SODIMMs

Micron Technology, Inc., reserves the right to change products or specifications without notice.

DM89.p65 – Rev. 12/98

©1998, Micron Technology, Inc.

4, 8 MEG x 32

DRAM SODIMMs

ADVANCE

EDO PAGE MODE

AC ELECTRICAL CHARACTERISTICS

AC CHARACTERISTICS - EDO PAGE MODE OPTION

-5

-6

PARAMETER

SYMBOL

MIN

MAX

MIN

MAX

UNITS

NOTES

Access time from column address

25

30

ns

Column-address setup to CAS# precharge

12

15

ns

Column-address hold time (referenced to RAS#)

38

45

ns

Column-address setup time

0

0

ns

Row-address setup time

0

0

ns

Access time from CAS#

13

15

ns

Column-address hold time

8

10

ns

CAS# pulse width

8

10,000

10

10,000

ns

CAS# LOW to “Don’t Care” during Self Refresh

15

15

ns

25

CAS# hold time (CBR Refresh)

8

10

ns

4

CAS# to output in Low-Z

0

0

ns

Data output hold after next CAS# LOW

3

3

ns

CAS# precharge time

8

10

ns

13

Access time from CAS# precharge

28

35

ns

CAS# to RAS# precharge time

5

5

ns

CAS# hold time

38

45

ns

CAS# setup time (CBR Refresh)

5

5

ns

4

WRITE command to CAS# lead time

8

10

ns

Data-in hold time

8

10

ns

18

Data-in setup time

0

0

ns

18

Output buffer turn-off delay

0

12

0

15

ns

17, 23

EDO-PAGE-MODE READ or WRITE cycle time

20

25

ns

Access time from RAS#

50

60

ns

RAS# to column-address delay time

9

12

ns

15

Row-address hold time

9

10

ns

RAS# pulse width

50

10,000

60

10,000

ns

RAS# pulse width (EDO PAGE MODE)

50

125,000

60

125,000

ns

RAS# pulse width during Self Refresh

100

100

µs

25

Random READ or WRITE cycle time

84

104

ns

RAS# to CAS# delay time

11

14

ns

14