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8, 16, 32 Meg x 64 Nonbuffered DRAM DIMMs

Micron Technology, Inc., reserves the right to change products or specifications without notice.

DM78.p65 – Rev. 2/99

©1999, Micron Technology, Inc.

8, 16, 32 MEG x 64

NONBUFFERED DRAM DIMMs

PARAMETER/CONDITION

SYMBOL SIZE

-5

-6

UNITS NOTES

STANDBY CURRENT: TTL

64MB

8

8

128MB

16

16

mA

256MB

32

32

STANDBY CURRENT: CMOS

64MB

4

4

128MB

8

8

mA

256MB

16

16

OPERATING CURRENT: Random READ/WRITE

64MB

1,400

1,320

Average power supply current

128MB 2,720

2,560

mA

3, 24

256MB 2,736

2,576

OPERATING CURRENT: EDO PAGE MODE

64MB

1,240

1,000

Average power supply current

128MB 2,400

1,920

mA

3, 24

256MB 2,416

1,936

REFRESH CURRENT: RAS#-ONLY

64MB

1,400

1,320

Average power supply current

128MB 2,720

2,560

mA

3, 24

256MB 2,736

2,576

REFRESH CURRENT: CBR

64MB

1,320

1,240

Average power supply current

128MB 2,560

2,400

mA

3, 4

256MB 2,576

2,416

MAX

CAPACITANCE

PARAMETER

SYMBOL 64MB 128MB 256MB UNITS NOTES

Input Capacitance: A0-A11

46

86

168

p F

2

Input Capacitance: WE0#, WE2#, OE0#, OE2#

32

60

118

p F

2

Input Capacitance: RAS0#-RAS3#

32

60

60

p F

2

Input Capacitance: CAS0#-CAS7#

10

18

32

p F

2

Input Capacitance: SCL, SA0-SA2

666

p F

2

Input/Output Capacitance: DQ0-DQ63, SDA

12

12

22

p F

2

MAX